INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

doi:10.1088/1004-423X/4/2/009

中国物理B ›› 1995, Vol. 4 ›› Issue (2): 139-146.doi: 10.1088/1004-423X/4/2/009

INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

康俊勇, 黄启圣

Department of Physics, Xiamen University, Xiamen 361005, China

收稿日期:1994-01-19 出版日期:1995-02-20 发布日期:1995-02-20
基金资助:
Project supported by the National Natural Science Foundation of China, and by the Natural Science Foundation of Fujian Province, also by the State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics.

INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

KANG JUN-YONG (康俊勇), HUANG QI-SHENG (黄启圣)

Department of Physics, Xiamen University, Xiamen 361005, China

Received:1994-01-19 Online:1995-02-20 Published:1995-02-20
Supported by:
Project supported by the National Natural Science Foundation of China, and by the Natural Science Foundation of Fujian Province, also by the State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics.

摘要/Abstract

摘要： Ge-doped GaAs single crystals have been grown by liquid-encapsulated Czochralski method in absence and presence of a magnetic field of 4000Gauss. By means of high op-tical efficiency photoluminescence, spectra of the grown crystals at room temperature were obtained, which consist of two emission bands A and B at 1.39-1.42eV and 0.97-1.05eV, respectively. Comparing the photoluminescence mappings with microphotographs of etched wafers, Hall effect results and electron probe microanalyses of the n- and p-type crystals with different Ge concentrations, we considered that the emission bands A and B originate from Ge-related acceptor and donor complexes, respectively. The complexes were formed during crystal growth, mainly due to temperature fluctuations in molten Ge-doped GaAs. The concentrations and homogeneities of the defects can be improved by the application of a magnetic field during crystal growth to suppress the temperature fluctuation.

Abstract: Ge-doped GaAs single crystals have been grown by liquid-encapsulated Czochralski method in absence and presence of a magnetic field of 4000Gauss. By means of high op-tical efficiency photoluminescence, spectra of the grown crystals at room temperature were obtained, which consist of two emission bands A and B at 1.39-1.42eV and 0.97-1.05eV, respectively. Comparing the photoluminescence mappings with microphotographs of etched wafers, Hall effect results and electron probe microanalyses of the n- and p-type crystals with different Ge concentrations, we considered that the emission bands A and B originate from Ge-related acceptor and donor complexes, respectively. The complexes were formed during crystal growth, mainly due to temperature fluctuations in molten Ge-doped GaAs. The concentrations and homogeneities of the defects can be improved by the application of a magnetic field during crystal growth to suppress the temperature fluctuation.

中图分类号: (Ge and Si)

61.72.uf

81.10.Fq (Growth from melts; zone melting and refining) 78.55.Cr (III-V semiconductors) 81.65.Cf (Surface cleaning, etching, patterning) 72.20.My (Galvanomagnetic and other magnetotransport effects)

康俊勇, 黄启圣. INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD[J]. 中国物理B, 1995, 4(2): 139-146.

KANG JUN-YONG (康俊勇), HUANG QI-SHENG (黄启圣). INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD[J]. Acta Physica Sinica (Overseas Edition), 1995, 4(2): 139-146.

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INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

INVESTIGATION OF DEFECTS IN Ge-DOPED GaAs CRYSTAL GROWN IN A MAGNETIC FIELD

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