Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

doi:10.1088/1674-1056/ad8624

中国物理B ›› 2024, Vol. 33 ›› Issue (12): 128102-128102.doi: 10.1088/1674-1056/ad8624

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Zhenyu Chen(陈振宇)^1,2, Degang Zhao(赵德刚)^1,3,†, Feng Liang(梁锋)^1,‡, Zongshun Liu(刘宗顺)¹, Jing Yang(杨静)¹, and Ping Chen(陈平)¹

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2024-08-23 修回日期:2024-09-30 接受日期:2024-10-12 出版日期:2024-12-15 发布日期:2024-11-21
通讯作者: Degang Zhao, Feng Liang E-mail:dgzhao@semi.ac.cn;liangfeng13@semi.ac.cn
基金资助:
Project supported by Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2023124), the National Key Research and Development Program of China (Grant No. 2022YFB3608100), Key Research and Development Program of Jiangsu Province (Grant No. BE2021008-1), Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (Grant No. 2022SXTD016), the National Natural Science Foundation of China (Grant Nos. 62274157, 61904172, 62127807, 62234011, 61974162, 62034008, 62074142, 62074140, and 62250038), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43030101).

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Zhenyu Chen(陈振宇)^1,2, Degang Zhao(赵德刚)^1,3,†, Feng Liang(梁锋)^1,‡, Zongshun Liu(刘宗顺)¹, Jing Yang(杨静)¹, and Ping Chen(陈平)¹

1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2024-08-23 Revised:2024-09-30 Accepted:2024-10-12 Online:2024-12-15 Published:2024-11-21
Contact: Degang Zhao, Feng Liang E-mail:dgzhao@semi.ac.cn;liangfeng13@semi.ac.cn
Supported by:
Project supported by Youth Innovation Promotion Association of the Chinese Academy of Sciences (Grant No. 2023124), the National Key Research and Development Program of China (Grant No. 2022YFB3608100), Key Research and Development Program of Jiangsu Province (Grant No. BE2021008-1), Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (Grant No. 2022SXTD016), the National Natural Science Foundation of China (Grant Nos. 62274157, 61904172, 62127807, 62234011, 61974162, 62034008, 62074142, 62074140, and 62250038), and Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB43030101).

摘要/Abstract

摘要： Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed from both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppress the lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in the well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving the output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

关键词: laser diodes, MOCVD, quantum wells, III-V semiconductors

Abstract: Multidimensional influences of indium composition in barrier layers on GaN-based blue laser diodes (LDs) are discussed from both material quality and device physics perspectives. LDs with higher indium content in the barriers demonstrate a notably lower threshold current and shorter lasing wavelength compared to those with lower indium content. Our experiments reveal that higher indium content in the barrier layers can partially reduce indium composition in the quantum wells, a novel discovery. Employing higher indium content barrier layers leads to improved luminescence properties of the MQW region. Detailed analysis reveals that this improvement can be attributed to better homogeneity in the indium composition of the well layers along the epitaxy direction. InGaN barrier layers suppress the lattice mismatch between barrier and well layers, thus mitigating the indium content pulling effect in the well layers. In supplement to experimental analysis, theoretical computations are performed, showing that InGaN barrier structures can effectively enhance carrier recombination efficiency and optical confinement of LD structure, thus improving the output efficiency of GaN-based blue LDs. Combining these theoretical insights with our experimental data, we propose that higher indium content barriers effectively enhance carrier recombination efficiency and indium content homogeneity in quantum well layers, thereby improving the output performance of GaN-based blue LDs.

Key words: laser diodes, MOCVD, quantum wells, III-V semiconductors

中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

81.15.Gh

78.67.De (Quantum wells) 42.55.Px (Semiconductor lasers; laser diodes) 81.05.Ea (III-V semiconductors)

Zhenyu Chen(陈振宇), Degang Zhao(赵德刚), Feng Liang(梁锋), Zongshun Liu(刘宗顺), Jing Yang(杨静), and Ping Chen(陈平). Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes[J]. 中国物理B, 2024, 33(12): 128102-128102.

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Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

Effects of TMIn flow rate during quantum barrier growth on multi-quantum well material properties and device performance of GaN-based laser diodes

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