中国物理B ›› 2024, Vol. 33 ›› Issue (3): 38502-038502.doi: 10.1088/1674-1056/ad1c56

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Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Zhetong Liu(刘哲彤)1,2, Bingyao Liu(刘秉尧)1,2, Dongdong Liang(梁冬冬)3,4, Xiaomei Li(李晓梅)1, Xiaomin Li(李晓敏)5, Li Chen(陈莉)1, Rui Zhu(朱瑞)1,†, Jun Xu(徐军)1, Tongbo Wei(魏同波)3,4,‡, Xuedong Bai(白雪冬)5,§, and Peng Gao(高鹏)1,2,6,¶   

  1. 1 Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China;
    2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;
    3 Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    5 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    6 International Center for Quantum Materials, Peking University, Beijing 100871, China
  • 收稿日期:2023-08-29 修回日期:2023-12-14 接受日期:2024-01-09 出版日期:2024-02-22 发布日期:2024-02-22
  • 通讯作者: Rui Zhu, Tongbo Wei, Xuedong Bai, Peng Gao E-mail:zhurui@pku.edu.cn;tbwei@semi.ac.cn;xdbai@iphy.ac.cn;pgao@pku.edu.cn
  • 基金资助:
    Projct supported by the National Key R&D Program of China (Grant No. 2019YFA0708202), the National Natural Science Foundation of China (Grant Nos. 11974023, 52021006, 61974139, 12074369, and 12104017), the “2011 Program” from the Peking–Tsinghua–IOP Collaborative Innovation Center of Quantum Matter, and the Youth Supporting Program of Institute of Semiconductors.

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

Zhetong Liu(刘哲彤)1,2, Bingyao Liu(刘秉尧)1,2, Dongdong Liang(梁冬冬)3,4, Xiaomei Li(李晓梅)1, Xiaomin Li(李晓敏)5, Li Chen(陈莉)1, Rui Zhu(朱瑞)1,†, Jun Xu(徐军)1, Tongbo Wei(魏同波)3,4,‡, Xuedong Bai(白雪冬)5,§, and Peng Gao(高鹏)1,2,6,¶   

  1. 1 Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China;
    2 Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China;
    3 Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    4 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
    5 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    6 International Center for Quantum Materials, Peking University, Beijing 100871, China
  • Received:2023-08-29 Revised:2023-12-14 Accepted:2024-01-09 Online:2024-02-22 Published:2024-02-22
  • Contact: Rui Zhu, Tongbo Wei, Xuedong Bai, Peng Gao E-mail:zhurui@pku.edu.cn;tbwei@semi.ac.cn;xdbai@iphy.ac.cn;pgao@pku.edu.cn
  • Supported by:
    Projct supported by the National Key R&D Program of China (Grant No. 2019YFA0708202), the National Natural Science Foundation of China (Grant Nos. 11974023, 52021006, 61974139, 12074369, and 12104017), the “2011 Program” from the Peking–Tsinghua–IOP Collaborative Innovation Center of Quantum Matter, and the Youth Supporting Program of Institute of Semiconductors.

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摘要： To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level, cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In0.15Ga0.85N five-period multiquantum wells. The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy, and the bandgaps of In0.15Ga0.85N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra. The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed. Our study establishing the direct relationship between the atomic structure of InxGa1-xN multiquantum wells and photoelectric properties provides useful information for nitride applications.

关键词: nitride multiquantum wells, defect, cathodoluminescence, scanning transmission electron microscopy

Abstract: To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level, cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In0.15Ga0.85N five-period multiquantum wells. The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy, and the bandgaps of In0.15Ga0.85N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra. The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed. Our study establishing the direct relationship between the atomic structure of InxGa1-xN multiquantum wells and photoelectric properties provides useful information for nitride applications.

Key words: nitride multiquantum wells, defect, cathodoluminescence, scanning transmission electron microscopy

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
62.40.+i (Anelasticity, internal friction, stress relaxation, and mechanical resonances) 61.72.-y (Defects and impurities in crystals; microstructure)