Reanalysis of energy band structure in the type-II quantum wells

doi:10.1088/1674-1056/ad36bc

中国物理B ›› 2024, Vol. 33 ›› Issue (6): 67302-067302.doi: 10.1088/1674-1056/ad36bc

Reanalysis of energy band structure in the type-II quantum wells

Xinxin Li(李欣欣)^1,2,†, Zhen Deng(邓震)^1,2,3,†, Yang Jiang(江洋)^1,2, Chunhua Du(杜春花)^1,2,3, Haiqiang Jia(贾海强)^1,2,4, Wenxin Wang(王文新)^1,2,4, and Hong Chen(陈弘)^1,2,3,4,‡

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

收稿日期:2024-03-18 修回日期:2024-03-22 接受日期:2024-03-22 出版日期:2024-06-18 发布日期:2024-06-18
通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005).

Reanalysis of energy band structure in the type-II quantum wells

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 The Yangtze River Delta Physics Research Center, Liyang 213000, China;
4 Songshan Lake Materials Laboratory, Dongguan 523808, China

Received:2024-03-18 Revised:2024-03-22 Accepted:2024-03-22 Online:2024-06-18 Published:2024-06-18
Contact: Hong Chen E-mail:hchen@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61991441 and 62004218), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB01000000), and Youth Innovation Promotion Association Chinese Academy of Sciences (Grant No. 2021005).

摘要/Abstract

摘要： Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region (corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

关键词: energy band structure, type-II quantum wells, low-dimensional semiconductors

Abstract: Band structure analysis holds significant importance for understanding the optoelectronic characteristics of semiconductor structures and exploring their potential applications in practice. For quantum well structures, the energy of carriers in the well splits into discrete energy levels due to the confinement of barriers in the growth direction. However, the discrete energy levels obtained at a fixed wave vector cannot accurately reflect the actual energy band structure. In this work, the band structure of the type-II quantum wells is reanalyzed. When the wave vectors of the entire Brillouin region (corresponding to the growth direction) are taken into account, the quantized energy levels of the carriers in the well are replaced by subbands with certain energy distributions. This new understanding of the energy bands of low-dimensional structures not only helps us to have a deeper cognition of the structure, but also may overturn many viewpoints in traditional band theories and serve as supplementary to the band theory of low-dimensional systems.

Key words: energy band structure, type-II quantum wells, low-dimensional semiconductors

中图分类号: (Surface states, band structure, electron density of states)

73.20.At

73.22.-f (Electronic structure of nanoscale materials and related systems) 73.63.Hs (Quantum wells)

Xinxin Li(李欣欣), Zhen Deng(邓震), Yang Jiang(江洋), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Reanalysis of energy band structure in the type-II quantum wells[J]. 中国物理B, 2024, 33(6): 67302-067302.

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Reanalysis of energy band structure in the type-II quantum wells

Reanalysis of energy band structure in the type-II quantum wells

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