中国物理B ›› 2024, Vol. 33 ›› Issue (11): 117801-117801.doi: 10.1088/1674-1056/ad71b2

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Relation of V/III ratio of AlN interlayer with the polarity of nitride

Zhaole Su(苏兆乐)1,2, Yangfeng Li(李阳锋)1,2, Xiaotao Hu(胡小涛)1,2, Yimeng Song(宋祎萌)4, Zhen Deng(邓震)1,2,5, Ziguang Ma(马紫光)1,2, Chunhua Du(杜春花)1,2, Wenxin Wang(王文新)1,2, Haiqiang Jia(贾海强)1,2,3, Yang Jiang(江洋)1,2,†, and Hong Chen(陈弘)1,2,3,‡   

  1. 1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    4 School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China;
    5 The Yangtze River Delta Physics Research Center, Liyang 213000, China
  • 收稿日期:2023-12-21 修回日期:2024-06-27 接受日期:2024-08-21 出版日期:2024-11-15 发布日期:2024-11-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 62004218) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000).

Relation of V/III ratio of AlN interlayer with the polarity of nitride

Zhaole Su(苏兆乐)1,2, Yangfeng Li(李阳锋)1,2, Xiaotao Hu(胡小涛)1,2, Yimeng Song(宋祎萌)4, Zhen Deng(邓震)1,2,5, Ziguang Ma(马紫光)1,2, Chunhua Du(杜春花)1,2, Wenxin Wang(王文新)1,2, Haiqiang Jia(贾海强)1,2,3, Yang Jiang(江洋)1,2,†, and Hong Chen(陈弘)1,2,3,‡   

  1. 1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 University of Chinese Academy of Sciences, Beijing 100049, China;
    3 Songshan Lake Materials Laboratory, Dongguan 523808, China;
    4 School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing 100083, China;
    5 The Yangtze River Delta Physics Research Center, Liyang 213000, China
  • Received:2023-12-21 Revised:2024-06-27 Accepted:2024-08-21 Online:2024-11-15 Published:2024-11-15
  • Contact: Yang Jiang, Hong Chen E-mail:jiangyang@iphy.ac.cn;hchen@iphy.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 62004218) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB33000000).

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摘要： N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to increase the V/III ratio of the low-temperature AlN interlayer, the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated. Finally, we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy (XPS), which provides a new direction for the control of GaN polarity.

关键词: semiconductors, III-V semiconductors, chemistry of MOCVD and other vapor deposition methods

Abstract: N-polar GaN film was obtained by using a high-temperature AlN buffer layer. It was found that the polarity could be inverted by a thin low-temperature AlN interlayer with the same V/III ratio as that of the high-temperature AlN layer. Continuing to increase the V/III ratio of the low-temperature AlN interlayer, the Ga-polarity of GaN film was inverted to N-polarity again but the crystal quality and surface roughness of GaN film greatly deteriorated. Finally, we analyzed the chemical environment of the AlN layer by x-ray photoelectron spectroscopy (XPS), which provides a new direction for the control of GaN polarity.

Key words: semiconductors, III-V semiconductors, chemistry of MOCVD and other vapor deposition methods

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
61.82.Fk (Semiconductors) 71.55.Eq (III-V semiconductors) 82.33.Ya (Chemistry of MOCVD and other vapor deposition methods)