Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

doi:10.1088/1674-1056/acf208

中国物理B ›› 2023, Vol. 32 ›› Issue (10): 107309-107309.doi: 10.1088/1674-1056/acf208

Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

Gang Wang(王刚)^1,2, Shan Guan(管闪)¹, Zhi-Gang Song(宋志刚)¹, and Jun-Wei Luo(骆军委)^1,2,†

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2023-06-13 修回日期:2023-08-05 接受日期:2023-08-21 出版日期:2023-09-21 发布日期:2023-09-22
通讯作者: Jun-Wei Luo E-mail:jwluo@semi.ac.cn
基金资助:
Project supported by the National Science Fund for Distinguished Young Scholars (Grant No. 11925407), the Basic Science Center Program of the National Natural Science Foundation of China (Grant No. 61888102), and the Key Research Program of Frontier Sciences of CAS (Grant No. ZDBS-LYJSC019), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-026).

Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

Gang Wang(王刚)^1,2, Shan Guan(管闪)¹, Zhi-Gang Song(宋志刚)¹, and Jun-Wei Luo(骆军委)^1,2,†

1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2023-06-13 Revised:2023-08-05 Accepted:2023-08-21 Online:2023-09-21 Published:2023-09-22
Contact: Jun-Wei Luo E-mail:jwluo@semi.ac.cn
Supported by:
Project supported by the National Science Fund for Distinguished Young Scholars (Grant No. 11925407), the Basic Science Center Program of the National Natural Science Foundation of China (Grant No. 61888102), and the Key Research Program of Frontier Sciences of CAS (Grant No. ZDBS-LYJSC019), and CAS Project for Young Scientists in Basic Research (Grant No. YSBR-026).

摘要/Abstract

摘要： The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy ($E_{\textrm{VS}}$) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin-valley entanglement resulting in the loss of spin information. These $E_{\textrm{VS}}$ fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of $E_{\textrm{VS}}$ even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of $E_{\textrm{VS}}$ observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the $E_{\textrm{VS}}$ spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers — an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in $E_{\textrm{VS}}$ by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining $E_{\textrm{VS}}$ in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.

关键词: quantum wells, valley splitting, alloy concentration fluctuation

Abstract: The achievement of universal quantum computing critically relies on scalability. However, ensuring the necessary uniformity for scalable silicon electron spin qubits poses a significant challenge due to the considerable fluctuations in valley splitting energy ($E_{\textrm{VS}}$) across quantum dot arrays, which impede the initialization of qubit systems comprising multiple spins and give rise to spin-valley entanglement resulting in the loss of spin information. These $E_{\textrm{VS}}$ fluctuations have been attributed to variations in the in-plane averaged alloy concentration along the confinement direction of Si/SiGe quantum wells. In this study, employing atomistic pseudopotential calculations, we unveil a significant spectrum of $E_{\textrm{VS}}$ even in the absence of such concentration fluctuations. This spectrum represents the lower limit of the wide range of $E_{\textrm{VS}}$ observed in numerous Si/SiGe quantum devices. By constructing simplified interface atomic step models, we analytically demonstrate that the lower bound of the $E_{\textrm{VS}}$ spread originates from the in-plane random distribution of Si and Ge atoms within SiGe barriers — an inherent characteristic that has been previously overlooked. Additionally, we propose an interface engineering approach to mitigate the in-plane randomness-induced fluctuations in $E_{\textrm{VS}}$ by inserting a few monolayers of pure Ge barrier at the Si/SiGe interface. Our findings provide valuable insights into the critical role of in-plane randomness in determining $E_{\textrm{VS}}$ in Si/SiGe quantum devices and offer reliable methods to enhance the feasibility of scalable Si-based spin qubits.

Key words: quantum wells, valley splitting, alloy concentration fluctuation

中图分类号: (Quantum wells)

73.21.Fg

73.22.-f (Electronic structure of nanoscale materials and related systems) 73.61.Cw (Elemental semiconductors)

Gang Wang(王刚), Shan Guan(管闪), Zhi-Gang Song(宋志刚), and Jun-Wei Luo(骆军委). Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface[J]. 中国物理B, 2023, 32(10): 107309-107309.

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Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface

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