[1] |
Xinxin Li(李欣欣), Zhen Deng(邓震), Yang Jiang(江洋), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Quantum confinement of carriers in the type-I quantum wells structure[J]. 中国物理B, 2024, 33(9): 97301-097301. |
[2] |
Xinxin Li(李欣欣), Zhen Deng(邓震), Yang Jiang(江洋), Chunhua Du(杜春花), Haiqiang Jia(贾海强), Wenxin Wang(王文新), and Hong Chen(陈弘). Reanalysis of energy band structure in the type-II quantum wells[J]. 中国物理B, 2024, 33(6): 67302-067302. |
[3] |
Zi-Hang Chen(陈子航), Jie Sheng(盛杰), Yu Liu(刘瑜), Xiao-Ming Shi(施小明), Houbing Huang(黄厚兵), Ke Xu(许可), Yue-Chao Wang(王越超), Shuai Wu(武帅), Bo Sun(孙博), Hai-Feng Liu(刘海风), and Hai-Feng Song(宋海峰). Phase-field simulations of the effect of temperature and interface for zirconium δ-hydrides[J]. 中国物理B, 2024, 33(4): 48201-048201. |
[4] |
Zhetong Liu(刘哲彤), Bingyao Liu(刘秉尧), Dongdong Liang(梁冬冬), Xiaomei Li(李晓梅), Xiaomin Li(李晓敏), Li Chen(陈莉), Rui Zhu(朱瑞), Jun Xu(徐军), Tongbo Wei(魏同波), Xuedong Bai(白雪冬), and Peng Gao(高鹏). Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope[J]. 中国物理B, 2024, 33(3): 38502-038502. |
[5] |
Shu-Fang Ma(马淑芳), Lei Li(李磊), Qing-Bo Kong(孔庆波), Yang Xu(徐阳), Qing-Ming Liu(刘青明), Shuai Zhang(张帅), Xi-Shu Zhang(张西数), Bin Han(韩斌), Bo-Cang Qiu(仇伯仓), Bing-She Xu(许并社), and Xiao-Dong Hao(郝晓东). Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2023, 32(3): 37801-037801. |
[6] |
Gang Wang(王刚), Shan Guan(管闪), Zhi-Gang Song(宋志刚), and Jun-Wei Luo(骆军委). Lower bound on the spread of valley splitting in Si/SiGe quantum wells induced by atomic rearrangement at the interface[J]. 中国物理B, 2023, 32(10): 107309-107309. |
[7] |
Shi-Xian Han(韩实现), Jin-Yi Yan(严进一), Chun-Fang Cao(曹春芳), Jin Yang(杨锦), An-Tian Du(杜安天), Yuan-Yu Chen(陈元宇), Ruo-Tao Liu(刘若涛), Hai-Long Wang(王海龙), and Qian Gong(龚谦). Single-mode GaSb-based laterally coupled distributed-feedback laser for CO2 gas detection[J]. 中国物理B, 2023, 32(10): 104205-104205. |
[8] |
Hao Xiang(向浩), Rui Wang(王锐), Feng-Lin Deng(邓凤麟), and Shao-Feng Wang(王少峰). Core structure and Peierls stress of the 90° dislocation and the 60° dislocation in aluminum investigated by the fully discrete Peierls model[J]. 中国物理B, 2022, 31(8): 86104-086104. |
[9] |
Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206. |
[10] |
Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208. |
[11] |
Jing-Peng Song(宋靖鹏) and Ang Li(李昂). Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene[J]. 中国物理B, 2022, 31(3): 37401-037401. |
[12] |
Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface[J]. 中国物理B, 2022, 31(11): 117201-117201. |
[13] |
Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801. |
[14] |
Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers[J]. 中国物理B, 2021, 30(9): 94204-094204. |
[15] |
Jun-Jie Su(苏俊杰), Jun Wang(王军), and Guo-Dong Xia(夏国栋). Effect of the particle temperature on lift force of nanoparticle in a shear rarefied flow[J]. 中国物理B, 2021, 30(7): 75101-075101. |