Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

doi:10.1088/1674-1056/acc7f6

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 128701-128701.doi: 10.1088/1674-1056/acc7f6

Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

Lucky Agarwal¹, Varun Mishra², Ravi Prakash Dwivedi^1,†, Vishal Goyal³, and Shweta Tripathi⁴

1 School of Electronics Engineering, Vellore Institute of Technology, Chennai 600127, India;
2 Department of Electronics and Communication Engineering Graphic Era(deemed to be University), Dehradun, Uttarakhand 248002, India;
3 Department of Electronics and Communication Engineering, GLA University, Mathura 281406, India;
4 Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India

收稿日期:2022-11-09 修回日期:2023-03-22 接受日期:2023-03-28 出版日期:2023-11-14 发布日期:2023-11-22
通讯作者: Ravi Prakash Dwivedi E-mail:raviprakash.dwivedi@vit.ac.in
基金资助:
Authors greatly acknowledge MNNIT Allahabad for accessing the software facility.

Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

Lucky Agarwal¹, Varun Mishra², Ravi Prakash Dwivedi^1,†, Vishal Goyal³, and Shweta Tripathi⁴

1 School of Electronics Engineering, Vellore Institute of Technology, Chennai 600127, India;
2 Department of Electronics and Communication Engineering Graphic Era(deemed to be University), Dehradun, Uttarakhand 248002, India;
3 Department of Electronics and Communication Engineering, GLA University, Mathura 281406, India;
4 Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004, India

Received:2022-11-09 Revised:2023-03-22 Accepted:2023-03-28 Online:2023-11-14 Published:2023-11-22
Contact: Ravi Prakash Dwivedi E-mail:raviprakash.dwivedi@vit.ac.in
Supported by:
Authors greatly acknowledge MNNIT Allahabad for accessing the software facility.

摘要/Abstract

摘要： A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors (TFETs) is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the proper functioning of the device. TCAD simulation studies of the proposed structure and junction structure have been compared, and showed an enhanced rectification of 10⁴ times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand sides of the fixed gate dielectric, which improves the biosensor capture area, and hence the sensitivity. By considering neutral and charged biomolecules with different dielectric constants, TCAD simulation studies were compared for their sensitivities. The off-state current I_OFF can be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current. Additionally, it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage. To explore the device performance when the nanogaps are fully filled, half filled and unevenly filled, extensive TCAD simulations have been run. The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

关键词: biomolecules, high-k dielectric, junction-less, vertical tunnel field effect transistor (TFET)

Abstract: A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors (TFETs) is reported. The junction-less technique, in which metals with specific work functions are deposited on the source region to modulate the channel conductivity, is used to provide the necessary doping for the proper functioning of the device. TCAD simulation studies of the proposed structure and junction structure have been compared, and showed an enhanced rectification of 10⁴ times. The proposed structure is designed to have a nanocavity of length 10 nm on the left- and right-hand sides of the fixed gate dielectric, which improves the biosensor capture area, and hence the sensitivity. By considering neutral and charged biomolecules with different dielectric constants, TCAD simulation studies were compared for their sensitivities. The off-state current I_OFF can be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current. Additionally, it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage. To explore the device performance when the nanogaps are fully filled, half filled and unevenly filled, extensive TCAD simulations have been run. The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.

Key words: biomolecules, high-k dielectric, junction-less, vertical tunnel field effect transistor (TFET)

中图分类号: (Biomolecules: types)

87.14.-g

77.22.Ch (Permittivity (dielectric function)) 85.30.-z (Semiconductor devices) 61.82.Fk (Semiconductors)

Lucky Agarwal, Varun Mishra, Ravi Prakash Dwivedi, Vishal Goyal, and Shweta Tripathi. Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications[J]. 中国物理B, 2023, 32(12): 128701-128701.

参考文献

[1] Barbaro M, Bonfiglio A and Raffo L 2006 IEEE Trans. Electron. Devices 53 158
[2] Kim C H, Jung C, Park H G and Choi Y K 2008 Biochip J. 2 127
[3] Chanda M, Das R, Kundu A and Sarkar C K 2017 Superlattices Microstruct. 104 451
[4] Narang R, Saxena M, Gupta R S and Gupta M 2012 IEEE Electron. Device Lett. 33 268
[5] Choi J M, Han J W, Choi S J and Choi Y K 2010 IEEE Trans. Electron. Devices 57 3477
[6] Jayaswal N, Raman A, Kumar N, Singh S 2019 Superlattices Microstruct. 125 256
[7] Singh S, Khosla M and Wadhwa G 2021 Appl. Phys. A 127 16
[8] Tsukada K, Kariya M, Yamaguchi T, Kiwa T, Yamada H, Maehara T, Yamamoto T, Kunitsugu S 2010 Jpn. J. Appl. Phys. 49 024206
[9] Wei W, Lü W, Han Y, Zhang C and Chen D 2023 Chin. Phys. B 32 097301
[10] Gnudi A, Reggiani S, Gnani E and Baccarani G 2012 IEEE Electron Device Lett. 33 336
[11] Li W and Woo J 2020 IEEE Trans. Electron Device 67 1480
[12] Ko E, Lee H, Park J and Shin C 2016 IEEE Trans. Electron Devices 63 5030
[13] Wang B, Hu S and Feng Y 2020 Chin. Phys. B 29 107401
[14] Nigam K, Kondekar P and Sharma D 2016 Micro Nano Lett. 11 319
[15] Choi K M and Choi W Y 2013 IEEE Electron Device Lett. 34 942
[16] Zhang W H, Li Z C, Guan Y H and Zhang Y F 2017 Chin. Phys. B 26 078502
[17] Shan C, Wang Y and Bao M T 2016 IEEE Trans. Electron. Devices 63 2275
[18] Busse S, Scheumann V, Menges B and Mittler S 2002 Biosensors Bioelectron. 17 710
[19] Bhattacharyya A, Chanda M and De D 2019 IEEE Trans. Electron. Devices 66 3988
[20] Bibi F, Villain M, Guillaume C, Sorli B and Gontard N 2016 Sensors 16 1232
[21] Choi W Y, Park B, Lee J D and Liu T K 2007 IEEE Trans. Electron. Device Lett. 28 743
[22] Bhuwalka K K, Sedlmaier S, Ludsteck A K, Toksdorf C and Schulzeand J, Eisele I 2004 IEEE Trans. Electron. Device 51 279
[23] Wirths S, Tiedemann A T, rellenkamp S, Buca D, Zhao Q T and Mantl S 2015 in Proc. Int. Electron. Devices Meeting 608
[24] Huang Q, Huang R, Wu C, Zhu H, Chen C, Wang J, Guo L, Wang R, Ye L and Wang Y 2014 in Proc. IEEE Int. Electron. Devices Meeting 13
[25] Zhou G, Li R, Vasen T, Qi M, Chae S, Lu Y, Zhang Q, Zhu H, Kuo J M, Kosel T and Wistey M 2012 in Proc. Int. Electron. Devices Meeting 32
[26] Devi W V and Bhowmick B 2019 Micro Nano Lett. 14 69
[27] Sarkar D and Banerjee K 2012 Appl. Phys. Lett. 100 143108
[28] Im H, Huang X J, Gu B and Choi Y K 2007 Nat. Nanotechnol. 2 430
[29] Kanungo S, Chattopadhyay S, Gupta P S and Rahaman H 2015 IEEE Trans. Electron. Devices 62 994
[30] Narang R, Saxena M, Gupta R S and Gupta M 2015 IEEE Trans. Nanotechnol. 14 427
[31] Mishra V, Verma Y K and Gupta S K 2019 Journal of Nanoelectronics and Optoelectronics 14 161
[32] Wangkheirakpam V D, Bhowmick B and Pukhrambam P D 2020 IEEE Trans. Nanotechnology 19 156
[33] Kanungo S, Chattopadhyay S, Gupta P S, Sinha K and Rahaman H 2016 IEEE Trans. Electron. Devices 63 2589
[34] Verma M, Tirkey S, Yadav S, Sharma D and Yadav D S 2017 IEEE Trans. Electron. Devices 64 3841
[35] Goswami R and Bhowmick B 2019 IEEE Sens. J. 9 9600

Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

Si-Ge based vertical tunnel field-effect transistor of junction-less structure with improved sensitivity using dielectric modulation for biosensing applications

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 9

Metrics

本文评价

推荐阅读 0

[1]	Qiyu Chen(陈麒宇), Xirong Yang(杨西荣), Zongzhen Li(李宗臻), Jinshun Bi(毕津顺), Kai Xi(习凯),Zhenxing Zhang(张振兴), Pengfei Zhai(翟鹏飞), Youmei Sun(孙友梅), and Jie Liu(刘杰). Investigation of heavy ion irradiation effects on a charge trapping memory capacitor by bm C-V measurement[J]. 中国物理B, 2023, 32(9): 96102-096102.
[2]	D Chevizovich, S Zdravković, A V Chizhov, and Z Ivić. Charge self-trapping in two strand biomolecules: Adiabatic polaron approach[J]. 中国物理B, 2023, 32(1): 10506-010506.
[3]	姚佳飞, 郭宇锋, 张振宇, 杨可萌, 张茂林, 夏天. Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars[J]. 中国物理B, 2020, 29(3): 38503-038503.
[4]	陈建颖, 赵心愿, 刘璐, 徐静平. Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics[J]. 中国物理B, 2019, 28(12): 128101-128101.
[5]	吴丽娟, 章中杰, 宋月, 杨航, 胡利民, 袁娜. Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET[J]. 中国物理B, 2017, 26(2): 27101-027101.
[6]	徐悦, 陈虎, 璩玉杰, 黎明, 欧阳钟灿, 刘冬生, 严洁. Mechano-chemical selections of two competitive unfolding pathways of a single DNA i-motif[J]. 中国物理B, 2014, 23(6): 68702-068702.
[7]	韩锴, 王晓磊, 徐永贵, 杨红, 王文武. Analysis of flatband voltage shift of metal/high-k/SiO₂/Si stack based on energy band alignment of entire gate stack[J]. , 2014, 23(11): 117702-117702.
[8]	韩锴, 王晓磊, 杨红, 王文武. Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO₂ dielectric[J]. 中国物理B, 2013, 22(11): 117701-117701.
[9]	黄安平, 郑晓虎, 肖志松, 杨智超, 王玫, 朱剑豪, 杨晓东. Flat-band voltage shift in metal-gate/high-k/Si stacks[J]. 中国物理B, 2011, 20(9): 97303-097303.