The growth and expansive applications of amorphous Ga2O3

doi:10.1088/1674-1056/accf81

中国物理B ›› 2023, Vol. 32 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/accf81

The growth and expansive applications of amorphous Ga₂O₃

Zhao-Ying Xi(奚昭颖)¹, Li-Li Yang(杨莉莉)^1,2,†, Lin-Cong Shu(舒林聪)¹, Mao-Lin Zhang(张茂林)^1,2, Shan Li(李山)^1,2, Li Shi(史丽)³, Zeng Liu(刘增)^1,2,4,‡, Yu-Feng Guo(郭宇锋)^1,2, and Wei-Hua Tang(唐为华)^1,2,§

1. Innovation Center for Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2. National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3. Key Laboratory for Organic Electronics and Information Displays(KLOEID) & Institute of Advanced Materials(IAM), Jiangsu Key Laboratory for Biosensors, Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
4. Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Ministry of Industry and Information Technology, Nanjing 211106, China

收稿日期:2023-04-04 修回日期:2023-04-20 接受日期:2023-04-24 发布日期:2023-07-24
通讯作者: Li-Li Yang, Zeng Liu, Wei-Hua Tang E-mail:liliyang@njupt.edu.cn;zengliu@njupt.edu.cn;whtang@njupt.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605404), the National Natural Science Foundation of China (Grant Nos.62204126 and 62204125), the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos.XK1060921119, XK1060921002, and XK1060921115), and the Open Fund of the Key Laboratory of Aerospace Information Materials and Physics (NUAA) MIIT.

The growth and expansive applications of amorphous Ga₂O₃

1. Innovation Center for Gallium Oxide Semiconductor(IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
2. National and Local Joint Engineering Laboratory for RF Integration and Micro-Assembly Technologies, Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
3. Key Laboratory for Organic Electronics and Information Displays(KLOEID) & Institute of Advanced Materials(IAM), Jiangsu Key Laboratory for Biosensors, Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, China;
4. Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Ministry of Industry and Information Technology, Nanjing 211106, China

Received:2023-04-04 Revised:2023-04-20 Accepted:2023-04-24 Published:2023-07-24
Contact: Li-Li Yang, Zeng Liu, Wei-Hua Tang E-mail:liliyang@njupt.edu.cn;zengliu@njupt.edu.cn;whtang@njupt.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No.2022YFB3605404), the National Natural Science Foundation of China (Grant Nos.62204126 and 62204125), the Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications (Grant Nos.XK1060921119, XK1060921002, and XK1060921115), and the Open Fund of the Key Laboratory of Aerospace Information Materials and Physics (NUAA) MIIT.

摘要/Abstract

摘要： As a promising ultra-wide bandgap semiconductor material, gallium oxide (Ga₂O₃) is attracting extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4 eV-5.3 eV allowing for deep-ultraviolet (deep-UV) detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga₂O₃ (usually refer to as stable monoclinic β-Ga₂O₃), amorphous Ga₂O₃ (a-Ga₂O₃) film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga₂O₃ extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarize several major deposition methods for a-Ga₂O₃ films, of which the characteristics are discussed. Additionally, potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga₂O₃ thin films, e.g., in photodetectors, resistive random access memories (RRAMs) and gas sensors, are represented with a fruitful discussion of their structures and operating mechanisms.

关键词: amorphous-Ga₂O₃, thin film, functional application

Abstract: As a promising ultra-wide bandgap semiconductor material, gallium oxide (Ga₂O₃) is attracting extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4 eV-5.3 eV allowing for deep-ultraviolet (deep-UV) detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga₂O₃ (usually refer to as stable monoclinic β-Ga₂O₃), amorphous Ga₂O₃ (a-Ga₂O₃) film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga₂O₃ extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarize several major deposition methods for a-Ga₂O₃ films, of which the characteristics are discussed. Additionally, potential methods to optimize the film properties are proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga₂O₃ thin films, e.g., in photodetectors, resistive random access memories (RRAMs) and gas sensors, are represented with a fruitful discussion of their structures and operating mechanisms.

Key words: amorphous-Ga₂O₃, thin film, functional application

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

47.54.Jk (Materials science applications)

Zhao-Ying Xi(奚昭颖), Li-Li Yang(杨莉莉), Lin-Cong Shu(舒林聪), Mao-Lin Zhang(张茂林), Shan Li(李山), Li Shi(史丽), Zeng Liu(刘增), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). The growth and expansive applications of amorphous Ga₂O₃[J]. 中国物理B, 2023, 32(8): 88502-088502.

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The growth and expansive applications of amorphous Ga₂O₃

The growth and expansive applications of amorphous Ga₂O₃

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