中国物理B ›› 2023, Vol. 32 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/ace4b7

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Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films

Dong-Yang Liu(刘东阳)1,2, Kun Tang(汤琨)1,3,†, Shun-Ming Zhu(朱顺明)1,3, Rong Zhang(张荣)1,3, You-Dou Zheng(郑有炓)1,3, and Shu-Lin Gu(顾书林)1,3,‡   

  1. 1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 The Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;
    3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2023-05-06 修回日期:2023-07-05 接受日期:2023-07-06 出版日期:2023-10-16 发布日期:2023-10-16
  • 通讯作者: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • 基金资助:
    Project supported by the National Key R&D Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081), the Natural Science Foundation of Jiangsu Province (Grant No. BK20160065), and the Fundamental Research Funds for the Central Universities.

Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films

Dong-Yang Liu(刘东阳)1,2, Kun Tang(汤琨)1,3,†, Shun-Ming Zhu(朱顺明)1,3, Rong Zhang(张荣)1,3, You-Dou Zheng(郑有炓)1,3, and Shu-Lin Gu(顾书林)1,3,‡   

  1. 1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 The Shanghai Huahong Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;
    3 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China
  • Received:2023-05-06 Revised:2023-07-05 Accepted:2023-07-06 Online:2023-10-16 Published:2023-10-16
  • Contact: Kun Tang, Shu-Lin Gu E-mail:ktang@nju.edu.cn;slgu@nju.edu.cn
  • Supported by:
    Project supported by the National Key R&D Program of China (Grant Nos. 2018YFB0406502, 2017YFF0210800, and 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61974059, 61674077, and 61774081), the Natural Science Foundation of Jiangsu Province (Grant No. BK20160065), and the Fundamental Research Funds for the Central Universities.

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摘要： Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas (N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy (NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration (～3.2× 1019 cm-3) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility (～700 cm2/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

关键词: boron doped diamond, nitrogen and oxygen co-doping, crystal quality, Hall effect measurement, acceptor doping concentration

Abstract: Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas (N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy (NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration (～3.2× 1019 cm-3) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility (～700 cm2/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

Key words: boron doped diamond, nitrogen and oxygen co-doping, crystal quality, Hall effect measurement, acceptor doping concentration

中图分类号:  (Diamond)

  • 81.05.ug
81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy) 61.72.-y (Defects and impurities in crystals; microstructure)