中国物理B ›› 2023, Vol. 32 ›› Issue (8): 88101-088101.doi: 10.1088/1674-1056/acc2ae

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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

Ying Zhu(朱盈)1,2, Wang Lin(林旺)1,2, Dong-Shuai Li(李东帅)1,2, Liu-An Li(李柳暗)1,2, Xian-Yi Lv(吕宪义)1,2, Qi-Liang Wang(王启亮)1,2,†, and Guang-Tian Zou(邹广田)1,2,‡   

  1. 1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
    2. Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
  • 收稿日期:2022-12-24 修回日期:2023-02-25 接受日期:2023-03-09 发布日期:2023-07-14
  • 通讯作者: Qi-Liang Wang, Guang-Tian Zou E-mail:wangqiliang@jlu.edu.cn;gtzou@jlu.edu.cn
  • 基金资助:
    Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No.2020B0101690001), the Natural Science Foundation of Sichuan Province, China (Grant No.2022NSFSC0886), and the Open Project of State Key Laboratory of Superhard Materials, Jilin Province, China (Grant No.202314).

High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure

Ying Zhu(朱盈)1,2, Wang Lin(林旺)1,2, Dong-Shuai Li(李东帅)1,2, Liu-An Li(李柳暗)1,2, Xian-Yi Lv(吕宪义)1,2, Qi-Liang Wang(王启亮)1,2,†, and Guang-Tian Zou(邹广田)1,2,‡   

  1. 1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
    2. Shenzhen Research Institute, Jilin University, Shenzhen 518057, China
  • Received:2022-12-24 Revised:2023-02-25 Accepted:2023-03-09 Published:2023-07-14
  • Contact: Qi-Liang Wang, Guang-Tian Zou E-mail:wangqiliang@jlu.edu.cn;gtzou@jlu.edu.cn
  • Supported by:
    Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No.2020B0101690001), the Natural Science Foundation of Sichuan Province, China (Grant No.2022NSFSC0886), and the Open Project of State Key Laboratory of Superhard Materials, Jilin Province, China (Grant No.202314).

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摘要： The trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baliga's FOM value of 2.28 GW/cm2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.

关键词: diamond, Schottky barrier diode, junction terminal extension, simulation

Abstract: The trench diamond junction barrier Schottky (JBS) diode with a sidewall enhanced structure is designed by Silvaco simulation. Comparing with the conventional trench JBS diode, Schottky contact areas are introduced on the sidewall of the trench beside the top cathode. The sidewall Schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit (FOM) value. In addition, the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown voltage. With the optimal parameters of device structure, a high Baliga's FOM value of 2.28 GW/cm2 is designed. Therefore, the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.

Key words: diamond, Schottky barrier diode, junction terminal extension, simulation

中图分类号:  (Diamond)

  • 81.05.ug
73.30.+y (Surface double layers, Schottky barriers, and work functions) 85.30.Kk (Junction diodes) 88.30.gg (Design and simulation)