中国物理B ›› 2020, Vol. 29 ›› Issue (10): 108501-.doi: 10.1088/1674-1056/ab9f28

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Jie-Yu Li(李婕妤)1,2, Yang Wang(汪洋)1,2,†(), Dan-Dan Jia(夹丹丹)1,2, Wei-Peng Wei(魏伟鹏)1,2, Peng Dong(董鹏)3   

  • 收稿日期:2020-05-09 修回日期:2020-06-12 接受日期:2020-06-23 出版日期:2020-10-05 发布日期:2020-10-05
  • 通讯作者: Yang Wang(汪洋)

New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications

Jie-Yu Li(李婕妤)1,2, Yang Wang(汪洋)1,2,†, Dan-Dan Jia(夹丹丹)1,2, Wei-Peng Wei(魏伟鹏)1,2, and Peng Dong(董鹏)3   

  1. 1 School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China
    2 Hunan Engineering Laboratory for Microelectronics, Optoelectronics and System on A Chip, Xiangtan 411105, China
    3 SuperESD Microelectronics Technology CO., LTD., Changsha 410100, China
  • Received:2020-05-09 Revised:2020-06-12 Accepted:2020-06-23 Online:2020-10-05 Published:2020-10-05
  • Contact: †Corresponding author. E-mail: wangyang@xtu.edu.cn
  • About author:
    †Corresponding author. E-mail: wangyang@xtu.edu.cn
    * Project supported by the National Natural Science Foundation of China (Grant Nos. 61704145, 61774129, and 61827812), the Natural Science Foundation of Hunan Province, China (Grant No. 2019JJ50609), and the Key Technology Program of Changsha City, China (Grant No. kq1902042).

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Abstract:

A new dual directional silicon-controlled rectifier based electrostatic discharge (ESD) protection device suitable for 12-V applications is proposed in this paper. The proposed device (NPEMDDSCR) is based on the embedded DDSCR (EMDDSCR) structure, in which the P+ electrode and P+ injection are removed from the inner finger. Compared with the conventional modified DDSCR (MDDSCR), its high holding voltage meets the requirements for applications. Compared with the embedded DDSCR (EMDDSCR), it has good conduction uniformity. The MDDSCR, EMDDSCR, and NPEMDDSCR are fabricated with an identical width in a 0.5-μm CDMOS process. In order to verify and predict the characteristics of the proposed ESD protection device, a transmission line pulse (TLP) testing system and a two-dimensional device simulation platform are used in this work. The measurements demonstrate that the NPEMDDSCR provides improved reliability and higher area efficiency for 12 V or similar applications. The measurement results also show that the NPEMDDSCR provides higher robustness and better latch-up immunity capability.

Key words: DDSCR, holding voltage, failure current, conduction uniformity

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Rs (Thyristors) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)