中国物理B ›› 2017, Vol. 26 ›› Issue (2): 27701-027701.doi: 10.1088/1674-1056/26/2/027701
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Xue-Li Ma(马雪丽), Hong Yang(杨红), Jin-Juan Xiang(项金娟), Xiao-Lei Wang(王晓磊), Wen-Wu Wang(王文武), Jian-Qi Zhang(张建齐), Hua-Xiang Yin(殷华湘), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超)
Xue-Li Ma(马雪丽)1,3, Hong Yang(杨红)1,3, Jin-Juan Xiang(项金娟)1,3, Xiao-Lei Wang(王晓磊)1,3, Wen-Wu Wang(王文武)1,3, Jian-Qi Zhang(张建齐)2, Hua-Xiang Yin(殷华湘)1,3, Hui-Long Zhu(朱慧珑)1,3, Chao Zhao(赵 超)1,3
摘要:
In this work, ultrathin pure HfO2 and Al-doped HfO2 films (about 4-nm thick) are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO2 and Al-doped HfO2 films are both amorphous. After 550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO2 film while the Al-doped HfO2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.
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