中国物理B ›› 2018, Vol. 27 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/27/7/078503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平)   

  1. 1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
    2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    3 School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2018-01-25 修回日期:2018-05-08 出版日期:2018-07-05 发布日期:2018-07-05
  • 通讯作者: Liuan Li, Jin-Ping Ao E-mail:liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors

Tong Zhang(张彤)1, Taofei Pu(蒲涛飞)1, Tian Xie(谢天)1, Liuan Li(李柳暗)2, Yuyu Bu(补钰煜)3, Xiao Wang(王霄)3, Jin-Ping Ao(敖金平)1,3   

  1. 1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
    2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    3 School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2018-01-25 Revised:2018-05-08 Online:2018-07-05 Published:2018-07-05
  • Contact: Liuan Li, Jin-Ping Ao E-mail:liliuan@mail.sysu.edu.cn;jpao@ee.tokushima-u.ac.jp
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

摘要:

In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.

关键词: AlGaN/GaN HFET, gate dielectric, HfOxNy, thermal stability

Abstract:

In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.

Key words: AlGaN/GaN HFET, gate dielectric, HfOxNy, thermal stability

中图分类号:  (Semiconductor devices)

  • 85.30.-z
61.82.Ms (Insulators) 68.60.Dv (Thermal stability; thermal effects)