中国物理B ›› 2018, Vol. 27 ›› Issue (7): 78503-078503.doi: 10.1088/1674-1056/27/7/078503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Tong Zhang(张彤), Taofei Pu(蒲涛飞), Tian Xie(谢天), Liuan Li(李柳暗), Yuyu Bu(补钰煜), Xiao Wang(王霄), Jin-Ping Ao(敖金平)
Tong Zhang(张彤)1, Taofei Pu(蒲涛飞)1, Tian Xie(谢天)1, Liuan Li(李柳暗)2, Yuyu Bu(补钰煜)3, Xiao Wang(王霄)3, Jin-Ping Ao(敖金平)1,3
摘要:
In this paper, we adopted thermally stable HfOxNy as gate dielectric for TiN/HfOxNy/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It demonstrated that the surface morphologies, composition, and optical properties of the HfOxNy films were dependent on oxygen flow rate in the O2/N2/Ar mixture sputtering ambient. The obtained metal-oxide-semiconductor heterostructure field-effect transistors by depositing HfO2 and HfOxNy dielectric at different oxygen flow rates possessed a small hysteresis and a low leakage current. After post deposition annealing at 900 ℃, the device using HfOxNy dielectric operated normally with good pinch-off characteristics, while obvious degradation are observed for the HfO2 gated one at 600 ℃. This result shows that the HfOxNy dielectric is a promising candidate for the self-aligned gate process.
中图分类号: (Semiconductor devices)