Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

doi:10.1088/1674-1056/ab3c29

中国物理B ›› 2019, Vol. 28 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/ab3c29

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

Xiaoguang Wu(吴晓光)

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-05-07 修回日期:2019-08-06 出版日期:2019-10-05 发布日期:2019-10-05
通讯作者: Xiaoguang Wu E-mail:xgwu@red.semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303).

Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

Xiaoguang Wu(吴晓光)^1,2

1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-05-07 Revised:2019-08-06 Online:2019-10-05 Published:2019-10-05
Contact: Xiaoguang Wu E-mail:xgwu@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076092 and 61290303).

摘要/Abstract

摘要：

The optical response of an inverted InAs/GaSb quantum well is studied theoretically. The influence of an in-plane magnetic field that is applied parallel to the quantum well is considered. This in-plane magnetic field will induce a dynamical polarization even when the electric field component of the external optical field is parallel to the quantum well. The electron-electron interaction in the quantum well system will lead to the de-polarization effect. This effect is found to be important and is taken into account in the calculation of the optical response. It is found that the main feature in the frequency dependence of the velocity-velocity correlation function remains when the velocity considered is parallel to the in-plane magnetic field. When the direction of the velocity is perpendicular to the in-plane magnetic field, the de-polarization effect will suppress the oscillatory behavior in the corresponding velocity-velocity correlation function. The in-plane magnetic field can change the band structure of the quantum well drastically from a gapped semiconductor to a no-gapped semi-metal, but it is found that the distribution of the velocity matrix elements or the optical transition matrix elements in the wave vector space has the same two-tadpole topology.

关键词: quantum well, magnetic field, de-polarization effect

Abstract:

Key words: quantum well, magnetic field, de-polarization effect

中图分类号: (Quantum wells)

73.21.Fg

78.20.Ls (Magneto-optical effects) 78.30.Fs (III-V and II-VI semiconductors) 78.67.De (Quantum wells)

吴晓光. Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field[J]. 中国物理B, 2019, 28(10): 107302-107302.

Xiaoguang Wu(吴晓光). Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field[J]. Chin. Phys. B, 2019, 28(10): 107302-107302.

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Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field

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