中国物理B ›› 2017, Vol. 26 ›› Issue (8): 87308-087308.doi: 10.1088/1674-1056/26/8/087308
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Linna Zhao(赵琳娜), Peihong Yu(于沛洪), Zixiang Guo(郭子骧), Dawei Yan(闫大为), Hao Zhou(周浩), Jinbo Wu(吴锦波), Zhiqiang Cui(崔志强), Huarui Sun(孙华锐), Xiaofeng Gu(顾晓峰)
Linna Zhao(赵琳娜)1, Peihong Yu(于沛洪)1, Zixiang Guo(郭子骧)3, Dawei Yan(闫大为)1, Hao Zhou(周浩)1, Jinbo Wu(吴锦波)1, Zhiqiang Cui(崔志强)1, Huarui Sun(孙华锐)2, Xiaofeng Gu(顾晓峰)1
摘要:
The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reverse-bias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations.
中图分类号: (III-V semiconductors)