中国物理B ›› 2016, Vol. 25 ›› Issue (9): 97306-097306.doi: 10.1088/1674-1056/25/9/097306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

X-band inverse class-F GaN internally-matched power amplifier

Bo-Chao Zhao(赵博超), Yang Lu(卢阳), Wen-Zhe Han(韩文哲), Jia-Xin Zheng(郑佳欣), Heng-Shuang Zhang(张恒爽), Pei-jun Ma(马佩军), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)   

  1. 1. School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China
  • 收稿日期:2016-02-06 修回日期:2016-05-27 出版日期:2016-09-05 发布日期:2016-09-05
  • 通讯作者: Pei-jun Ma E-mail:pjma@xidian.edu.cn
  • 基金资助:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

X-band inverse class-F GaN internally-matched power amplifier

Bo-Chao Zhao(赵博超)1, Yang Lu(卢阳)1, Wen-Zhe Han(韩文哲)1, Jia-Xin Zheng(郑佳欣)2, Heng-Shuang Zhang(张恒爽)1, Pei-jun Ma(马佩军)1, Xiao-Hua Ma(马晓华)2, Yue Hao(郝跃)1,2   

  1. 1. School of Microelectronics, Xidian University, Xi'an 710071, China;
    2. School of Advanced Material and Nanotechnology, Xidian University, Xi'an 710071, China
  • Received:2016-02-06 Revised:2016-05-27 Online:2016-09-05 Published:2016-09-05
  • Contact: Pei-jun Ma E-mail:pjma@xidian.edu.cn
  • Supported by:

    Project supported by the National High Technology Research and Development Program of China (Grant No. 2015AA016801).

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摘要：

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

关键词: GaN internally-matched power amplifier, inverse class-F, compensation design, X-band power amplifier

Abstract:

An X-band inverse class-F power amplifier is realized by a 1-mm AlGaN/GaN high electron mobility transistor (HEMT). The intrinsic and parasitic components inside the transistor, especially output capacitor Cds, influence the harmonic impedance heavily at the X-band, so compensation design is used for meeting the harmonic condition of inverse class-F on the current source plane. Experiment results show that, in the continuous-wave mode, the power amplifier achieves 61.7% power added efficiency (PAE), which is 16.3% higher than the class-AB power amplifier realized by the same kind of HEMT. To the best of our knowledge, this is the first inverse class-F GaN internally-matched power amplifier, and the PAE is quite high at the X-band.

Key words: GaN internally-matched power amplifier, inverse class-F, compensation design, X-band power amplifier

中图分类号:  (III-V semiconductors)

  • 73.61.Ey
84.60.Bk (Performance characteristics of energy conversion systems; figure of merit) 84.30.Le (Amplifiers) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)