Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors

doi:10.1088/1674-1056/27/4/047208

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 47208-047208.doi: 10.1088/1674-1056/27/4/047208

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors

Su-Zhen Luan(栾苏珍), Yu-Cheng Wang(汪钰成), Yin-Tao Liu(刘银涛), Ren-Xu Jia(贾仁需)

1. School of Electronic Engineering, Xidian University, Xi'an 710071, China;
2. School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2017-12-14 修回日期:2018-01-04 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Ren-Xu Jia E-mail:rxjia@mail.xidian.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51602241) and the China Postdoctoral Science Foundation (Grant No. 2016M592754).

Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors

Su-Zhen Luan(栾苏珍)¹, Yu-Cheng Wang(汪钰成)², Yin-Tao Liu(刘银涛)², Ren-Xu Jia(贾仁需)²

1. School of Electronic Engineering, Xidian University, Xi'an 710071, China;
2. School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2017-12-14 Revised:2018-01-04 Online:2018-04-05 Published:2018-04-05
Contact: Ren-Xu Jia E-mail:rxjia@mail.xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51602241) and the China Postdoctoral Science Foundation (Grant No. 2016M592754).

摘要/Abstract

摘要： In this manuscript, the perovskite-based metal-oxide-semiconductor field effect transistors (MOSFETs) with phenyl-C₆₁-butyric acid methylester (PCBM) layers are studied. The MOSFETs are fabricated on perovskites, and characterized by photoluminescence spectra (PL), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). With PCBM layers, the current-voltage hysteresis phenomenon is effetely inhibited, and both the transfer and output current values increase. The band energy diagrams are proposed, which indicate that the electrons are transferred into the PCBM layer, resulting in the increase of photocurrent. The electron mobility and hole mobility are extracted from the transfer curves, which are about one order of magnitude as large as those of PCBM deposited, which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites, and the effects of ionized impurity scattering on carrier transport become smaller.

关键词: metal-oxide-semiconductor field effect transistors, photoelectric characteristics, perovskite

Abstract: In this manuscript, the perovskite-based metal-oxide-semiconductor field effect transistors (MOSFETs) with phenyl-C₆₁-butyric acid methylester (PCBM) layers are studied. The MOSFETs are fabricated on perovskites, and characterized by photoluminescence spectra (PL), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). With PCBM layers, the current-voltage hysteresis phenomenon is effetely inhibited, and both the transfer and output current values increase. The band energy diagrams are proposed, which indicate that the electrons are transferred into the PCBM layer, resulting in the increase of photocurrent. The electron mobility and hole mobility are extracted from the transfer curves, which are about one order of magnitude as large as those of PCBM deposited, which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites, and the effects of ionized impurity scattering on carrier transport become smaller.

Key words: metal-oxide-semiconductor field effect transistors, photoelectric characteristics, perovskite

中图分类号: (Photoconduction and photovoltaic effects)

72.40.+w

78.55.Kz (Solid organic materials)

栾苏珍, 汪钰成, 刘银涛, 贾仁需. Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors[J]. 中国物理B, 2018, 27(4): 47208-047208.

Su-Zhen Luan(栾苏珍), Yu-Cheng Wang(汪钰成), Yin-Tao Liu(刘银涛), Ren-Xu Jia(贾仁需). Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors[J]. Chin. Phys. B, 2018, 27(4): 47208-047208.

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Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors

Effect of depositing PCBM on perovskite-based metal-oxide-semiconductor field effect transistors

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