中国物理B ›› 2016, Vol. 25 ›› Issue (7): 78502-078502.doi: 10.1088/1674-1056/25/7/078502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

Yu Zhao(招瑜), Bingfeng Fan(范冰丰), Yiting Chen(陈义廷), Yi Zhuo(卓毅), Zhoujun Pang(庞洲骏), Zhen Liu(刘振), Gang Wang(王钢)   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;
    2 School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China
  • 收稿日期:2016-02-17 修回日期:2016-03-20 出版日期:2016-07-05 发布日期:2016-07-05
  • 通讯作者: Gang Wang E-mail:stswangg@mail.sysu.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204049 and 51402366), Guangdong Natural Science Foundation, China (Grant No. S2012040007363), and Foundation for Distinguished Young Talents in Higher Education of Guangdong, China (Grant Nos. 2012LYM0058 and 2013LYM0022).{These two authors contributed equally to this paper.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer

Yu Zhao(招瑜)1,2, Bingfeng Fan(范冰丰)1, Yiting Chen(陈义廷)1, Yi Zhuo(卓毅)1, Zhoujun Pang(庞洲骏)2, Zhen Liu(刘振)2, Gang Wang(王钢)1   

  1. 1 State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China;
    2 School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, China
  • Received:2016-02-17 Revised:2016-03-20 Online:2016-07-05 Published:2016-07-05
  • Contact: Gang Wang E-mail:stswangg@mail.sysu.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 61204049 and 51402366), Guangdong Natural Science Foundation, China (Grant No. S2012040007363), and Foundation for Distinguished Young Talents in Higher Education of Guangdong, China (Grant Nos. 2012LYM0058 and 2013LYM0022).{These two authors contributed equally to this paper.

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摘要：

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.

关键词: light-emitting diodes, III-V material, transparent conductive layer, anodic aluminum oxide

Abstract:

We report an effective enhancement in light extraction of GaN-based light-emitting diodes (LEDs) with an Al-doped ZnO (AZO) transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent through-pore anodic aluminum oxide (AAO) membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 mA and 56% at 100 mA compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.

Key words: light-emitting diodes, III-V material, transparent conductive layer, anodic aluminum oxide

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
42.50.Wk (Mechanical effects of light on material media, microstructures and particles) 61.72.uj (III-V and II-VI semiconductors)