Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors

doi:10.1088/1674-1056/25/11/118502

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 118502-118502.doi: 10.1088/1674-1056/25/11/118502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors

Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯)

1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China;
3 Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

收稿日期:2016-03-18 修回日期:2016-07-28 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Lu Liu, Wing-Man Tang E-mail:liulu@hust.edu.cn;laip@eee.hku.hk
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors

Han-Han Lu(卢汉汉)¹, Jing-Ping Xu(徐静平)¹, Lu Liu(刘璐)¹, Pui-To Lai(黎沛涛)², Wing-Man Tang(邓咏雯)³

1 School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;
2 Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China;
3 Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

Received:2016-03-18 Revised:2016-07-28 Online:2016-11-05 Published:2016-11-05
Contact: Lu Liu, Wing-Man Tang E-mail:liulu@hust.edu.cn;laip@eee.hku.hk
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61176100 and 61274112), the University Development Fund of the University of Hong Kong, China (Grant No. 00600009), and the Hong Kong Polytechnic University, China (Grant No. 1-ZVB1).

摘要/Abstract

摘要： An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive.

关键词: MOS capacitor, C-V curve, frequency dispersion, oxide-trap capacitance

Abstract: An equivalent distributed capacitance model is established by considering only the gate oxide-trap capacitance to explain the frequency dispersion in the C-V curve of MOS capacitors measured for a frequency range from 1 kHz to 1 MHz. The proposed model is based on the Fermi-Dirac statistics and the charging/discharging effects of the oxide traps induced by a small ac signal. The validity of the proposed model is confirmed by the good agreement between the simulated results and experimental data. Simulations indicate that the capacitance dispersion of an MOS capacitor under accumulation and near flatband is mainly caused by traps adjacent to the oxide/semiconductor interface, with negligible effects from the traps far from the interface, and the relevant distance from the interface at which the traps can still contribute to the gate capacitance is also discussed. In addition, by excluding the negligible effect of oxide-trap conductance, the model avoids the use of imaginary numbers and complex calculations, and thus is simple and intuitive.

Key words: MOS capacitor, C-V curve, frequency dispersion, oxide-trap capacitance

中图分类号: (Semiconductor-device characterization, design, and modeling)

85.30.De

85.30.Tv (Field effect devices)

卢汉汉, 徐静平, 刘璐, 黎沛涛, 邓咏雯. Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors[J]. 中国物理B, 2016, 25(11): 118502-118502.

Han-Han Lu(卢汉汉), Jing-Ping Xu(徐静平), Lu Liu(刘璐), Pui-To Lai(黎沛涛), Wing-Man Tang(邓咏雯). Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors[J]. Chin. Phys. B, 2016, 25(11): 118502-118502.

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Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors

Equivalent distributed capacitance model of oxide traps onfrequency dispersion of C-V curve for MOS capacitors

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