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Xue Wang(王雪), Shi-Xie Jiang, Lin Huang(黄林), Zi-Hui Chi(迟子惠), Dan Wu(吴丹), and Hua-Bei Jiang. Wideband frequency-dependent dielectric properties of rat tissues exposed to low-intensity focused ultrasound in the microwave frequency range[J]. 中国物理B, 2023, 32(3): 34305-034305. |
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Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
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Jia-Jun Ma(马佳俊), Kang Wu(吴康), Zhen-Yu Wang(王振宇), Rui-Song Ma(马瑞松), Li-Hong Bao(鲍丽宏), Qing Dai(戴庆), Jin-Dong Ren(任金东), and Hong-Jun Gao(高鸿钧). Monolayer MoS2 of high mobility grown on SiO2 substrate by two-step chemical vapor deposition[J]. 中国物理B, 2022, 31(8): 88105-088105. |
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Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD[J]. 中国物理B, 2022, 31(3): 38103-038103. |
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Yan Teng(滕妍), Dong-Yang Liu(刘东阳), Kun Tang(汤琨), Wei-Kang Zhao(赵伟康), Zi-Ang Chen(陈子昂), Ying-Meng Huang(黄颖蒙), Jing-Jing Duan(段晶晶), Yue Bian(卞岳), Jian-Dong Ye(叶建东), Shun-Ming Zhu(朱顺明), Rong Zhang(张荣), You-Dou Zheng(郑有炓), and Shu-Lin Gu(顾书林). Origin, characteristics, and suppression of residual nitrogen in MPCVD diamond growth reactor[J]. 中国物理B, 2022, 31(12): 128106-128106. |
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Weikang Zhao(赵伟康), Yan Teng(滕妍), Kun Tang(汤琨), Shunming Zhu(朱顺明), Kai Yang(杨凯), Jingjing Duan(段晶晶), Yingmeng Huang(黄颖蒙), Ziang Chen(陈子昂), Jiandong Ye(叶建东), and Shulin Gu(顾书林). Significant suppression of residual nitrogen incorporation in diamond film with a novel susceptor geometry employed in MPCVD[J]. 中国物理B, 2022, 31(11): 118102-118102. |
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Qi Liang(梁琦), Meng-Qi Yang(杨孟骐), Chang-Hao Wang(王长昊), and Ru-Zhi Wang(王如志). A simple method to synthesize worm-like AlN nanowires and its field emission studies[J]. 中国物理B, 2021, 30(8): 87302-087302. |
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Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
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Jin-Zi Ding(丁金姿), Wei Ren(任卫), Ai-Ling Feng(冯爱玲), Yao Wang(王垚), Hao-Sen Qiao(乔浩森), Yu-Xin Jia(贾煜欣), Shuang-Xiong Ma(马双雄), and Bo-Yu Zhang(张博宇). Synthesis of flower-like WS2 by chemical vapor deposition[J]. 中国物理B, 2021, 30(12): 126201-126201. |
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Zhenxing Liu(刘振兴), Liuan Li(李柳暗), Jinwei Zhang(张津玮), Qianshu Wu(吴千树), Yapeng Wang(王亚朋), Qiuling Qiu(丘秋凌), Zhisheng Wu(吴志盛), and Yang Liu(刘扬). Understanding of impact of carbon doping on background carrier conduction in GaN[J]. 中国物理B, 2021, 30(10): 107201-107201. |
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孟秀清, 陈书林, 方允樟, 寇建龙. Annealing-enhanced interlayer coupling interaction inGaS/MoS2 heterojunctions[J]. 中国物理B, 2019, 28(7): 78101-078101. |
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周海涛, 刘大博, 罗飞, 田野, 陈冬生, 罗炳威, 周璋, 申承民. Direct deposition of graphene nanowalls on ceramic powders for the fabrication of a ceramic matrix composite[J]. 中国物理B, 2019, 28(6): 68102-068102. |
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徐德刚, 朱先立, 王与烨, 李吉宁, 贺奕俽, 庞子博, 程红娟, 姚建铨. Optical-induced dielectric tunability properties of DAST crystal in THz range[J]. 中国物理B, 2019, 28(12): 127701-127701. |
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刘晓旭, 何大伟, 何家琪, 王永生, 富鸣. Chemical vapor deposition growth of crystal monolayer SnS2 with NaCl-assistant[J]. 中国物理B, 2019, 28(11): 118101-118101. |
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张亢, 潘海洋, 魏仲夏, 张敏昊, 宋风麒, 王学锋, 张荣. Synthesis and magnetotransport properties of Bi2Se3 nanowires[J]. 中国物理B, 2017, 26(9): 96101-096101. |