Understanding of impact of carbon doping on background carrier conduction in GaN

doi:10.1088/1674-1056/abfa0d

中国物理B ›› 2021, Vol. 30 ›› Issue (10): 107201-107201.doi: 10.1088/1674-1056/abfa0d

Understanding of impact of carbon doping on background carrier conduction in GaN

Zhenxing Liu(刘振兴)¹, Liuan Li(李柳暗)¹, Jinwei Zhang(张津玮)¹, Qianshu Wu(吴千树)¹, Yapeng Wang(王亚朋)¹, Qiuling Qiu(丘秋凌)¹, Zhisheng Wu(吴志盛)¹, and Yang Liu(刘扬)^1,2,†

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

收稿日期:2021-01-04 修回日期:2021-04-15 接受日期:2021-04-21 发布日期:2021-10-08
通讯作者: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
基金资助:
Project partially supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

Understanding of impact of carbon doping on background carrier conduction in GaN

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China

Received:2021-01-04 Revised:2021-04-15 Accepted:2021-04-21 Published:2021-10-08
Contact: Yang Liu E-mail:liuy69@mail.sysu.edu.cn
Supported by:
Project partially supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402800), the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003), the National Natural Science Foundation of China (Grant No. U1601210), and the Natural Science Foundation of Guangdong Province, China (Grant No. 2015A030312011).

摘要/Abstract

摘要： The impact of carbon doping on the background carrier conduction in GaN has been investigated. It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expected. Moreover, from the fitting of the temperature-dependent carrier concentration and mobility, it is observed that high nitrogen-vacancy (V_N) dominates the background carrier at room temperature which consequently results in n-type conduction. The doping agent (carbon atom) occupies the nitrogen site of GaN and forms C_N deep acceptor as revealed from photoluminescence. Besides, a relatively low hole concentration is ionized at room temperature which was insufficient for the compensation of n-type background carriers. Therefore, we concluded that this background carrier concentration can be suppressed by carbon doping, which substitutes the N site of GaN and finally decreases the V_N.

关键词: electrical properties and parameters, semiconductor materials, chemical vapor deposition, electronic transport

Abstract: The impact of carbon doping on the background carrier conduction in GaN has been investigated. It is found that the incorporation of carbon can effectively suppress the n-type background carrier concentration as expected. Moreover, from the fitting of the temperature-dependent carrier concentration and mobility, it is observed that high nitrogen-vacancy (V_N) dominates the background carrier at room temperature which consequently results in n-type conduction. The doping agent (carbon atom) occupies the nitrogen site of GaN and forms C_N deep acceptor as revealed from photoluminescence. Besides, a relatively low hole concentration is ionized at room temperature which was insufficient for the compensation of n-type background carriers. Therefore, we concluded that this background carrier concentration can be suppressed by carbon doping, which substitutes the N site of GaN and finally decreases the V_N.

Key words: electrical properties and parameters, semiconductor materials, chemical vapor deposition, electronic transport

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

72.80.Ey (III-V and II-VI semiconductors) 72.10.Bg (General formulation of transport theory) 72.10.-d (Theory of electronic transport; scattering mechanisms)

Zhenxing Liu(刘振兴), Liuan Li(李柳暗), Jinwei Zhang(张津玮), Qianshu Wu(吴千树), Yapeng Wang(王亚朋), Qiuling Qiu(丘秋凌), Zhisheng Wu(吴志盛), and Yang Liu(刘扬). Understanding of impact of carbon doping on background carrier conduction in GaN[J]. 中国物理B, 2021, 30(10): 107201-107201.

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Understanding of impact of carbon doping on background carrier conduction in GaN

Understanding of impact of carbon doping on background carrier conduction in GaN

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