中国物理B ›› 2017, Vol. 26 ›› Issue (9): 96101-096101.doi: 10.1088/1674-1056/26/9/096101

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Synthesis and magnetotransport properties of Bi2Se3 nanowires

Kang Zhang(张亢), Haiyang Pan(潘海洋), Zhongxia Wei(魏仲夏), Minhao Zhang(张敏昊), Fengqi Song(宋风麒), Xuefeng Wang(王学锋), Rong Zhang(张荣)   

  1. 1 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
  • 收稿日期:2017-04-06 修回日期:2017-05-11 出版日期:2017-09-05 发布日期:2017-09-05
  • 通讯作者: Xuefeng Wang E-mail:xfwang@nju.edu.cn
  • 基金资助:

    Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2013CB921103), the National Natural Science Foundation of China (Grant Nos. 11274003 and 91421109), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

Synthesis and magnetotransport properties of Bi2Se3 nanowires

Kang Zhang(张亢)1, Haiyang Pan(潘海洋)2, Zhongxia Wei(魏仲夏)2, Minhao Zhang(张敏昊)1, Fengqi Song(宋风麒)2, Xuefeng Wang(王学锋)1, Rong Zhang(张荣)1   

  1. 1 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
    2 National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
  • Received:2017-04-06 Revised:2017-05-11 Online:2017-09-05 Published:2017-09-05
  • Contact: Xuefeng Wang E-mail:xfwang@nju.edu.cn
  • Supported by:

    Project supported by the National Key Basic Research Program of China (Grant Nos. 2014CB921103 and 2013CB921103), the National Natural Science Foundation of China (Grant Nos. 11274003 and 91421109), and Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, China.

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摘要：

Bi2Se3, as a three-dimensional topological insulator, has attracted worldwide attention for its unique surface states which are protected by time-reversal symmetry. Here we report the synthesis and characterization of high-quality single-crystalline Bi2Se3 nanowires. Bi2Se3 nanowires were synthesized by chemical vapor deposition (CVD) method via gold-catalyzed vapor-liquid-solid (VLS) mechanism. The structure and morphology were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. In magnetotransport measurements, the Aharonov-Bohm (AB) effect was observed in a nanowire-based nanodevice, suggesting the existence of surface states in Bi2Se3 nanowires.

关键词: topological insulators, nanowires, chemical vapor deposition, Aharonov-Bohm effect

Abstract:

Bi2Se3, as a three-dimensional topological insulator, has attracted worldwide attention for its unique surface states which are protected by time-reversal symmetry. Here we report the synthesis and characterization of high-quality single-crystalline Bi2Se3 nanowires. Bi2Se3 nanowires were synthesized by chemical vapor deposition (CVD) method via gold-catalyzed vapor-liquid-solid (VLS) mechanism. The structure and morphology were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. In magnetotransport measurements, the Aharonov-Bohm (AB) effect was observed in a nanowire-based nanodevice, suggesting the existence of surface states in Bi2Se3 nanowires.

Key words: topological insulators, nanowires, chemical vapor deposition, Aharonov-Bohm effect

中图分类号:  (Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires))

  • 61.46.Km
73.43.Qt (Magnetoresistance) 73.63.-b (Electronic transport in nanoscale materials and structures)