Optical-induced dielectric tunability properties of DAST crystal in THz range

doi:10.1088/1674-1056/ab4e81

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 127701-127701.doi: 10.1088/1674-1056/ab4e81

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Optical-induced dielectric tunability properties of DAST crystal in THz range

De-Gang Xu(徐德刚), Xian-Li Zhu(朱先立), Yu-Ye Wang(王与烨), Ji-Ning Li(李吉宁), Yi-Xin He(贺奕俽), Zi-Bo Pang(庞子博), Hong-Juan Cheng(程红娟), Jian-Quan Yao(姚建铨)

1 Institute of Laser and Optoelectronics, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China;
2 Key Laboratory of Opto-electronic Information Technology(Tianjin University), Ministry of Education, Tianjin 300072, China;
3 The 46 th Research Institute of China Electronic Technology Group Corporation, Tianjin 300220, China

收稿日期:2019-08-23 修回日期:2019-09-27 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: Yu-Ye Wang E-mail:yuyewang@tju.edu.cn
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2015CB755403) and the National Natural Science Foundation of China (Grant Nos. 61775160, 61771332, 61705162, 51472251, and U1837202).

Optical-induced dielectric tunability properties of DAST crystal in THz range

De-Gang Xu(徐德刚)^1,2, Xian-Li Zhu(朱先立)^1,2, Yu-Ye Wang(王与烨)^1,2, Ji-Ning Li(李吉宁)^1,2, Yi-Xin He(贺奕俽)^1,2, Zi-Bo Pang(庞子博)³, Hong-Juan Cheng(程红娟)³, Jian-Quan Yao(姚建铨)^1,2

1 Institute of Laser and Optoelectronics, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China;
2 Key Laboratory of Opto-electronic Information Technology(Tianjin University), Ministry of Education, Tianjin 300072, China;
3 The 46 th Research Institute of China Electronic Technology Group Corporation, Tianjin 300220, China

Received:2019-08-23 Revised:2019-09-27 Online:2019-12-05 Published:2019-12-05
Contact: Yu-Ye Wang E-mail:yuyewang@tju.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2015CB755403) and the National Natural Science Foundation of China (Grant Nos. 61775160, 61771332, 61705162, 51472251, and U1837202).

摘要/Abstract

摘要： The optical-induced dielectric tunability properties of DAST crystal in THz range were experimentally demonstrated. The DAST crystal was grown by the spontaneous nucleation method (SNM) and characterized by infrared spectrum. With the optimum wavelength of the exciting optical field, the transmission spectra of the DAST crystal excited by 532 nm laser under different power were measured by terahertz time-domain spectroscopy (THz-TDS) at room temperature. The transmitted THz intensity reduction of 26% was obtained at 0.68 THz when the optical field was up to 80 mW. Meanwhile, the variation of refractive index showed an approximate quadratic behavior with the exciting optical field, which was related to the internal space charge field of photorefractive phenomenon in the DAST crystal caused by the photogenerated carrier. A significant enhancement of 13.7% for THz absorption coefficient occurred at 0.68 THz due to the photogenerated carrier absorption effect in the DAST crystal.

关键词: THz wave, organic DAST crystal, photogenerated carrier, dielectric property

Abstract: The optical-induced dielectric tunability properties of DAST crystal in THz range were experimentally demonstrated. The DAST crystal was grown by the spontaneous nucleation method (SNM) and characterized by infrared spectrum. With the optimum wavelength of the exciting optical field, the transmission spectra of the DAST crystal excited by 532 nm laser under different power were measured by terahertz time-domain spectroscopy (THz-TDS) at room temperature. The transmitted THz intensity reduction of 26% was obtained at 0.68 THz when the optical field was up to 80 mW. Meanwhile, the variation of refractive index showed an approximate quadratic behavior with the exciting optical field, which was related to the internal space charge field of photorefractive phenomenon in the DAST crystal caused by the photogenerated carrier. A significant enhancement of 13.7% for THz absorption coefficient occurred at 0.68 THz due to the photogenerated carrier absorption effect in the DAST crystal.

Key words: THz wave, organic DAST crystal, photogenerated carrier, dielectric property

中图分类号: (Dielectric properties of solids and liquids)

77.22.-d

66.30.hd (Ionic crystals) 61.05.cp (X-ray diffraction)

徐德刚, 朱先立, 王与烨, 李吉宁, 贺奕俽, 庞子博, 程红娟, 姚建铨. Optical-induced dielectric tunability properties of DAST crystal in THz range[J]. 中国物理B, 2019, 28(12): 127701-127701.

De-Gang Xu(徐德刚), Xian-Li Zhu(朱先立), Yu-Ye Wang(王与烨), Ji-Ning Li(李吉宁), Yi-Xin He(贺奕俽), Zi-Bo Pang(庞子博), Hong-Juan Cheng(程红娟), Jian-Quan Yao(姚建铨). Optical-induced dielectric tunability properties of DAST crystal in THz range[J]. Chin. Phys. B, 2019, 28(12): 127701-127701.

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Optical-induced dielectric tunability properties of DAST crystal in THz range

Optical-induced dielectric tunability properties of DAST crystal in THz range

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