中国物理B ›› 2015, Vol. 24 ›› Issue (8): 87302-087302.doi: 10.1088/1674-1056/24/8/087302

所属专题： TOPICAL REVIEW — Silicene

• TOPICAL REVIEW—Silicene • 上一篇    下一篇

Modulation of electronic properties with external fields in silicene-based nanostructures

李庚a b, 赵银昌a b, 郑蕊a b, 倪军a b, 吴言宁c   

  1. a State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
    b Collaborative Innovation Center of Quantum Matter, Beijing 100084, China;
    c School of Physics and Electronic Engineering, Fuyang Normal College, Fuyang 236037, China
  • 收稿日期:2015-03-02 修回日期:2015-05-13 出版日期:2015-08-05 发布日期:2015-08-05
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374175 and 11174171).

Modulation of electronic properties with external fields in silicene-based nanostructures

Li Geng (李庚)a b, Zhao Yin-Chang (赵银昌)a b, Zheng Rui (郑蕊)a b, Ni Jun (倪军)a b, Wu Yan-Ning (吴言宁)c   

  1. a State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China;
    b Collaborative Innovation Center of Quantum Matter, Beijing 100084, China;
    c School of Physics and Electronic Engineering, Fuyang Normal College, Fuyang 236037, China
  • Received:2015-03-02 Revised:2015-05-13 Online:2015-08-05 Published:2015-08-05
  • Contact: Ni Jun E-mail:junni@mail.tsinghua.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant Nos. 11374175 and 11174171).

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摘要：

This work reviews our recent works about the density functional theory (DFT) calculational aspects of electronic properties in silicene-based nanostructures with the modulation of external fields, such as electric field, strain, etc. For the two-dimensional (2D) silicene-based nonostructures, the magnetic moment of Fe-doped silicene shows a sharp jump at a threshold electric field, which indicates a good switching effect, implying potential applications as a magnetoelectric (ME) diode. With the electric field, the good controllability and sharp switching of the magnetism may offer a potential applications in the ME devices. For the one-dimensional (1D) nanostructures, the silicene nanoribbons with sawtooth edges (SSiNRs) are more stable than the zigzag silicene nanoribbons (ZSiNRs) and show spin-semiconducting features. Under external electric field or uniaxial compressive strain, the gapless spin-semiconductors are gained, which is significant in designing qubits for quantum computing in spintronics. The superlattice structures of silicene-based armchair nanoribbons (ASiSLs) is another example for 1D silicene nanostructures. The band structures of ASiSLs can be modulated by the size and strain of the superlattices. With the stain increased, the related energy gaps of ASiSLs will change, which are significantly different with that of the constituent nanoribbons. The results suggest potential applications in designing quantum wells.

关键词: electric field, magnetoelectric effect, spin-semiconductor, quantum well

Abstract:

This work reviews our recent works about the density functional theory (DFT) calculational aspects of electronic properties in silicene-based nanostructures with the modulation of external fields, such as electric field, strain, etc. For the two-dimensional (2D) silicene-based nonostructures, the magnetic moment of Fe-doped silicene shows a sharp jump at a threshold electric field, which indicates a good switching effect, implying potential applications as a magnetoelectric (ME) diode. With the electric field, the good controllability and sharp switching of the magnetism may offer a potential applications in the ME devices. For the one-dimensional (1D) nanostructures, the silicene nanoribbons with sawtooth edges (SSiNRs) are more stable than the zigzag silicene nanoribbons (ZSiNRs) and show spin-semiconducting features. Under external electric field or uniaxial compressive strain, the gapless spin-semiconductors are gained, which is significant in designing qubits for quantum computing in spintronics. The superlattice structures of silicene-based armchair nanoribbons (ASiSLs) is another example for 1D silicene nanostructures. The band structures of ASiSLs can be modulated by the size and strain of the superlattices. With the stain increased, the related energy gaps of ASiSLs will change, which are significantly different with that of the constituent nanoribbons. The results suggest potential applications in designing quantum wells.

Key words: electric field, magnetoelectric effect, spin-semiconductor, quantum well

中图分类号:  (Electronic structure of nanoscale materials and related systems)

  • 73.22.-f
68.43.Bc (Ab initio calculations of adsorbate structure and reactions) 73.20.Hb (Impurity and defect levels; energy states of adsorbed species)