Growth mechanism and modification of electronic and magnetic properties of silicene

doi:10.1088/1674-1056/24/8/087303

摘要/Abstract

摘要：

Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag (111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals.

关键词: silicene, growth mechanism, electronic properties, substrate effect

Abstract:

Key words: silicene, growth mechanism, electronic properties, substrate effect

中图分类号: (Electronic structure of nanoscale materials and related systems)

73.22.-f

73.20.At (Surface states, band structure, electron density of states) 75.75.-c (Magnetic properties of nanostructures) 68.55.A- (Nucleation and growth)

柳洪盛, 韩楠楠, 赵纪军. Growth mechanism and modification of electronic and magnetic properties of silicene[J]. 中国物理B, 2015, 24(8): 87303-087303.

Liu Hong-Sheng (柳洪盛), Han Nan-Nan (韩楠楠), Zhao Ji-Jun (赵纪军). Growth mechanism and modification of electronic and magnetic properties of silicene[J]. Chin. Phys. B, 2015, 24(8): 87303-087303.

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