Positive gate-bias temperature instability of ZnO thin-film transistor

doi:10.1088/1674-1056/23/6/068501

中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/23/6/068501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Positive gate-bias temperature instability of ZnO thin-film transistor

刘玉荣^{a b}, 苏晶^a, 黎沛涛^c, 姚若河^{a b}

a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b National Enginering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China

收稿日期:2013-07-24 修回日期:2013-12-26 出版日期:2014-06-15 发布日期:2014-06-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085) and the Research Grants Council of Hong Kong, China (Grant No. 7133/07E).

Positive gate-bias temperature instability of ZnO thin-film transistor

Liu Yu-Rong (刘玉荣)^{a b}, Su Jing (苏晶)^a, Lai Pei-Tao (黎沛涛)^c, Yao Ruo-He (姚若河)^{a b}

a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b National Enginering Technology Research Center for Mobile Ultrasonic Detection, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China

Received:2013-07-24 Revised:2013-12-26 Online:2014-06-15 Published:2014-06-15
Contact: Liu Yu-Rong E-mail:phlyr@scut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61076113 and 61274085) and the Research Grants Council of Hong Kong, China (Grant No. 7133/07E).

摘要/Abstract

摘要： The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate-dielectric/channel interface.

关键词: thin-film transistors (TFTs), zinc oxide, gate-bias instability, threshold-voltage shift

Abstract: The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current-voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate-dielectric/channel interface.

Key words: thin-film transistors (TFTs), zinc oxide, gate-bias instability, threshold-voltage shift

中图分类号: (Field effect devices)

85.30.Tv

73.61.Ga (II-VI semiconductors) 72.80.Ey (III-V and II-VI semiconductors) 73.20.-r (Electron states at surfaces and interfaces)

刘玉荣, 苏晶, 黎沛涛, 姚若河. Positive gate-bias temperature instability of ZnO thin-film transistor[J]. 中国物理B, 2014, 23(6): 68501-068501.

Liu Yu-Rong (刘玉荣), Su Jing (苏晶), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河). Positive gate-bias temperature instability of ZnO thin-film transistor[J]. Chin. Phys. B, 2014, 23(6): 68501-068501.

参考文献 30

[1]	Carcia P F, McLean R S, Reilly M H and Nunes G 2003 Appl. Phys. Lett. 82 1117
[2]	Chiang H Q, Wager J F, Hoffman R L, Jeong J and Keszler D A 2005 Appl. Phys. Lett. 86 013503
[3]	Li M, Zhang H Y, Guo C X, Xu J B and Fu X J 2009 Chin. Phys. B 18 1594
[4]	Lin C Y, Chien C W, Wu C H, Hsieh H H, Wu C C, Yeh Y H, Cheng C C, Lai C M and Yu M J 2012 IEEE Trans. Electron Dev. 59 1701
[5]	Ye Z and Wong M 2012 IEEE Eelectron Dev. Lett. 33 549
[6]	Lee J K and Choi D K 2012 J. Nanosci. Nanotechnol. 12 5859
[7]	Li S S, Liang C X, Wang X X, Li Y H, Song S M, Xin Y Q and Yang T L 2013 Acta Phys. Sin. 62 077302 (in Chinese)
[8]	Zhang L, Li J, Zhang X W, Jiang X Y and Zhang Z L 2009 Appl. Phys. Lett. 95 072112
[9]	Yoshida T, Tachibana T, Maemoto T, Sasa S and Inoue M 2010 Appl. Phys. A 101 685
[10]	Carcia P F, Mclean R S and Reilly M H 2006 Appl. Phys. Lett. 88 123509
[11]	Zhang G M, Guo L Q, Zhao K S and Yan Z H 2013 Acta Phys. Sin. 62 137201 (in Chinese)
[12]	Park J S, Jeong J K, Mo Y G, Kim H D and Kim C J 2008 Appl. Phys. Lett. 93 033513
[13]	Chiu H C, Wang H C, Lin C K, Chiu C W, Fu J S, Hsueh K P and Chien F T 2011 Electrochem. Solid-state Lett. 14 H385
[14]	Lu A, Sun J, Jiang J and Wan Q 2010 Appl. Phys. Lett. 96 043114
[15]	Kim W S, Moon Y K, Kim K T, Shin S Y, Ahn B D, Lee J H and Park J W 2011 Thin Solid Films 519 6849
[16]	Suresh A and Muth J F 2008 Appl. Phys. Lett. 92 033502
[17]	Huang H Q, Sun J, Liu F J, Zhao J W, Hu Z F, Li Z J, Zhang X Q and Wang Y S 2011 Chin. Phys. Lett. 28 128502
[18]	Kim W S, Moon Y K, Kim K T, Shin S Y and Park J W 2011 Thin Solid Films 520 578
[19]	Cross R B M, De Souza M M, Deane S C and Young N D 2008 IEEE Trans. Electron Dev. 55 1109
[20]	Li M, Lan L F, Xu M, Wang L, Xu H, Luo D X, Zou J H, Tao H, Yao R H and Peng J B 2011 J. Phys. D: Appl. Phys. 44 455102
[21]	Yuh J T and Bae B S 2010 Electron. Mater. Lett. 6 221
[22]	Cross R B M and De Souza M M 2008 IEEE Trans. Dev. Mater. Reliab. 8 277
[23]	Libsch F R and Kanicki J 1993 Appl. Phys. Lett. 62 1286
[24]	Lee J M, Cho I T, Lee J H and Kwon H I 2008 Appl. Phys. Lett. 93 093504
[25]	Lee J S, Park J S, Pyo Y S, Lee D B, Kim E H, Stryakhilev D, Kim T W, Jin D U and Mo Y G 2009 Appl. Phys. Lett. 95 123502
[26]	Grecu S, Roggenbuck M, Opitz A and Brutting W 2006 Org. Electron. 7 276
[27]	Itoh E and Miyairi K 2006 Thin Solid Films 499 95
[28]	Park S H K, Hwang C S, Ryu M, Yang S, Byun C, Shin J, Lee J I, Lee K, Oh M S and Im S 2009 Adv. Mater. 21 678
[29]	Tsai C T, Chang T C, Chen S C, Lo I, Tsao S W, Hung M C, Chang J J, Wu C Y and Huang C Y 2010 Appl. Phys. Lett. 96 242105
[30]	Tsai Y S and Chen J Z 2012 IEEE Trans. Electron Dev. 59 151

Positive gate-bias temperature instability of ZnO thin-film transistor

Positive gate-bias temperature instability of ZnO thin-film transistor

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