中国物理B ›› 2014, Vol. 23 ›› Issue (5): 58105-058105.doi: 10.1088/1674-1056/23/5/058105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

黄仕华, 刘剑   

  1. Physics Department, Zhejiang Normal University, Zhejiang 321004, China
  • 收稿日期:2013-08-08 修回日期:2013-10-31 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. FDS-KL2011-04), the Key Science and Technology Innovation Team of Zhejiang Province, China (Grant No. 2011R50012), and the Key Laboratory of Zhejiang Province, China (Grant No. 2013E10022).

Structural and electrical characterization of annealed Si1-xCx/SiC thin film prepared by magnetron sputtering

Huang Shi-Hua (黄仕华), Liu Jian (刘剑)   

  1. Physics Department, Zhejiang Normal University, Zhejiang 321004, China
  • Received:2013-08-08 Revised:2013-10-31 Online:2014-05-15 Published:2014-05-15
  • Contact: Huang Shi-Hua E-mail:huangshihua@zjnu.cn
  • About author:81.15.Cd; 78.55.Ap; 68.55.A-; 81.40.Ef
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076055), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University, China (Grant No. FDS-KL2011-04), the Key Science and Technology Innovation Team of Zhejiang Province, China (Grant No. 2011R50012), and the Key Laboratory of Zhejiang Province, China (Grant No. 2013E10022).

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摘要： Si-rich Si1-xCx/SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 ℃. The influences of annealing temperature (Ta) on the formation of Si and/or SiC nanocrystals (NCs) and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectrometry (FT-IR), current-voltage (I-V) technique, and capacitance-voltage (C-V) technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for Ta ≥ 800 ℃. At annealing temperatures of 1000 ℃ or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si-C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si-C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C-V and I-V results indicate that the interface quality of Si1-xCx/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for Ta ≥ 1000 ℃, which can be ascribed to the formation of Si and SiC NCs.

关键词: SiC, magnetron sputtering, annealing, leakage current

Abstract: Si-rich Si1-xCx/SiC multilayer thin films are prepared using magnetron sputtering, subsequently followed by thermal annealing in the range of 800-1200 ℃. The influences of annealing temperature (Ta) on the formation of Si and/or SiC nanocrystals (NCs) and on the electrical characteristics of the multilayer film are investigated by using a variety of analytical techniques, including X-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared spectrometry (FT-IR), current-voltage (I-V) technique, and capacitance-voltage (C-V) technique. XRD and Raman analyses indicate that Si NCs begin to form in samples for Ta ≥ 800 ℃. At annealing temperatures of 1000 ℃ or higher, the formation of Si NCs is accompanied by the formation of SiC NCs. With the increase in the annealing temperature, the shift of FT-IR Si-C bond absorption spectra toward a higher wave number along with the change of band shape can be explained by a Si-C transitional phase between the loss of substitutional carbon and the formation of SiC precipitates and a precursor for the growth of SiC crystalline. The C-V and I-V results indicate that the interface quality of Si1-xCx/SiC multilayer film is improved significantly and the leakage current is reduced rapidly for Ta ≥ 1000 ℃, which can be ascribed to the formation of Si and SiC NCs.

Key words: SiC, magnetron sputtering, annealing, leakage current

中图分类号:  (Deposition by sputtering)

  • 81.15.Cd
78.55.Ap (Elemental semiconductors) 68.55.A- (Nucleation and growth) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)