Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

doi:10.1088/1674-1056/24/11/118102

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 118102-118102.doi: 10.1088/1674-1056/24/11/118102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

陈龙^{a b}, 裴嘉鼎^b, 史达特^b, 李成^b, 张建明^b, 俞文杰^a, 狄增峰^a, 王曦^a

a State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Shanghai Simæra Incorporated, Shanghai 201800, China

收稿日期:2015-05-06 修回日期:2015-07-04 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Chen Long E-mail:long@simaera.com

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long (陈龙)^{a b}, Payne Justin (裴嘉鼎)^b, Strate Jan (史达特)^b, Li Cheng (李成)^b, Zhang Jian-Ming (张建明)^b, Yu Wen-Jie (俞文杰)^a, Di Zeng-Feng (狄增峰)^a, Wang Xi (王曦)^a

a State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
b Shanghai Simæra Incorporated, Shanghai 201800, China

Received:2015-05-06 Revised:2015-07-04 Online:2015-11-05 Published:2015-11-05
Contact: Chen Long E-mail:long@simaera.com

摘要/Abstract

摘要： Semi-polar (1-101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting 111 planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

关键词: metalorganic chemical vapor deposition, semipolar, light emitting diodes

Abstract: Semi-polar (1-101) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting 111 planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared (1-101) GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

Key words: metalorganic chemical vapor deposition, semipolar, light emitting diodes

中图分类号: (III-V semiconductors)

81.05.Ea

78.60.Fi (Electroluminescence)

陈龙, 裴嘉鼎, 史达特, 李成, 张建明, 俞文杰, 狄增峰, 王曦. Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates[J]. 中国物理B, 2015, 24(11): 118102-118102.

Chen Long (陈龙), Payne Justin (裴嘉鼎), Strate Jan (史达特), Li Cheng (李成), Zhang Jian-Ming (张建明), Yu Wen-Jie (俞文杰), Di Zeng-Feng (狄增峰), Wang Xi (王曦). Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates[J]. Chin. Phys. B, 2015, 24(11): 118102-118102.

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Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

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