Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

doi:10.1088/1674-1056/24/11/118101

中国物理B ›› 2015, Vol. 24 ›› Issue (11): 118101-118101.doi: 10.1088/1674-1056/24/11/118101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

陈伟杰^{a b}, 韩小标^{a b}, 林佳利^{a b}, 胡国亨^{a b}, 柳铭岗^{a b}, 杨亿斌^{a b}, 陈杰^{a b}, 吴志盛^{a b}, 刘扬^b, 张佰君^{a b}

a State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China;
b School of Physics and Engineering, Institute of Power Electronics and Control Technology, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2015-04-30 修回日期:2015-07-03 出版日期:2015-11-05 发布日期:2015-11-05
通讯作者: Liu Yang, Zhang Bai-Jun E-mail:liuy69@mail.sysu.edu.cn;zhbaij@mail.sysu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant No. 2011CB301903), the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the International Sci. & Tech. Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Chen Wei-Jie (陈伟杰)^{a b}, Han Xiao-Biao (韩小标)^{a b}, Lin Jia-Li (林佳利)^{a b}, Hu Guo-Heng (胡国亨)^{a b}, Liu Ming-Gang (柳铭岗)^{a b}, Yang Yi-Bin (杨亿斌)^{a b}, Chen Jie (陈杰)^{a b}, Wu Zhi-Sheng (吴志盛)^{a b}, Liu Yang (刘扬)^b, Zhang Bai-Jun (张佰君)^{a b}

a State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China;
b School of Physics and Engineering, Institute of Power Electronics and Control Technology, Sun Yat-Sen University, Guangzhou 510275, China

Received:2015-04-30 Revised:2015-07-03 Online:2015-11-05 Published:2015-11-05
Contact: Liu Yang, Zhang Bai-Jun E-mail:liuy69@mail.sysu.edu.cn;zhbaij@mail.sysu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61274039 and 51177175), the National Basic Research Program of China (Grant No. 2011CB301903), the Ph.D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Sci. & Tech. Collaboration Program of China (Grant No. 2012DFG52260), the International Sci. & Tech. Collaboration Program of Guangdong Province, China (Grant No. 2013B051000041), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

摘要/Abstract

摘要： Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO₂ mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned SiO₂ mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.

关键词: metal organic vapor phase epitaxy, selective area growth, migration length

Abstract: Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy (MOVPE) were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO₂ mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned SiO₂ mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.

Key words: metal organic vapor phase epitaxy, selective area growth, migration length

中图分类号: (III-V semiconductors)

81.05.Ea

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.16.Rf (Micro- and nanoscale pattern formation) 47.57.ef (Sedimentation and migration)

陈伟杰, 韩小标, 林佳利, 胡国亨, 柳铭岗, 杨亿斌, 陈杰, 吴志盛, 刘扬, 张佰君. Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE[J]. 中国物理B, 2015, 24(11): 118101-118101.

Chen Wei-Jie (陈伟杰), Han Xiao-Biao (韩小标), Lin Jia-Li (林佳利), Hu Guo-Heng (胡国亨), Liu Ming-Gang (柳铭岗), Yang Yi-Bin (杨亿斌), Chen Jie (陈杰), Wu Zhi-Sheng (吴志盛), Liu Yang (刘扬), Zhang Bai-Jun (张佰君). Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE[J]. Chin. Phys. B, 2015, 24(11): 118101-118101.

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Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

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