中国物理B ›› 2016, Vol. 25 ›› Issue (5): 57703-057703.doi: 10.1088/1674-1056/25/5/057703

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

Feng Liang(梁锋), Ping Chen(陈平), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Zhi-Juan Zhao(赵志娟), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Jing Yang(杨静), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Xiang Li(李翔), Shuang-Tao Liu(刘双韬), Hui Yang(杨辉), Li-Qun Zhang(张立群), Jian-Ping Liu(刘建平), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同)   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Center for Physicochemical Analysis and Measurement, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;
    3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
  • 收稿日期:2015-10-10 修回日期:2016-01-13 出版日期:2016-05-05 发布日期:2016-05-05
  • 通讯作者: Ping Chen E-mail:pchen@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H-SiC

Feng Liang(梁锋)1, Ping Chen(陈平)1, De-Gang Zhao(赵德刚)1, De-Sheng Jiang(江德生)1, Zhi-Juan Zhao(赵志娟)2, Zong-Shun Liu(刘宗顺)1, Jian-Jun Zhu(朱建军)1, Jing Yang(杨静)1, Wei Liu(刘炜)1, Xiao-Guang He(何晓光)1, Xiao-Jing Li(李晓静)1, Xiang Li(李翔)1, Shuang-Tao Liu(刘双韬)1, Hui Yang(杨辉)3, Li-Qun Zhang(张立群)3, Jian-Ping Liu(刘建平)3, Yuan-Tao Zhang(张源涛)4, Guo-Tong Du(杜国同)4   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2. Center for Physicochemical Analysis and Measurement, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China;
    3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
    4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
  • Received:2015-10-10 Revised:2016-01-13 Online:2016-05-05 Published:2016-05-05
  • Contact: Ping Chen E-mail:pchen@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), the One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

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摘要： We have investigated the electron affinity of Si-doped AlN films (NSi= 1.0 ×1018-1.0×1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.

关键词: AlN, electron affinity, photoelectron spectroscopy, metalorganic chemical vapor deposition

Abstract: We have investigated the electron affinity of Si-doped AlN films (NSi= 1.0 ×1018-1.0×1019 cm-3) with thicknesses of 50, 200, and 400 nm, synthesized by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n-type (001)6H-SiC substrates. The positive and small electron affinity of AlN films was observed through the ultraviolet photoelectron spectroscopy (UPS) analysis, where an increase in electron affinity appears with the thickness of AlN films increasing, i.e., 0.36 eV for the 50-nm-thick one, 0.58 eV for the 200-nm-thick one, and 0.97 eV for the 400-nm-thick one. Accompanying the x-ray photoelectron spectroscopy (XPS) analysis on the surface contaminations, it suggests that the difference of electron affinity between our three samples may result from the discrepancy of surface impurity contaminations.

Key words: AlN, electron affinity, photoelectron spectroscopy, metalorganic chemical vapor deposition

中图分类号:  (AlN)

  • 77.55.hd
79.60.-i (Photoemission and photoelectron spectra) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))