中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48105-048105.doi: 10.1088/1674-1056/25/4/048105

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2015-10-07 修回日期:2015-12-29 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Hui-Jie Li E-mail:hjli2009@semi.ac.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

Aluminum incorporation efficiencies in A-and C-plane AlGaN grown by MOVPE

Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)   

  1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2015-10-07 Revised:2015-12-29 Online:2016-04-05 Published:2016-04-05
  • Contact: Hui-Jie Li E-mail:hjli2009@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61504128, 61504129, 61274041, and 11275228), the National Basic Research Program of China (Grant No. 2012CB619305), the National High Technology Research and Development Program of China (Grant Nos. 2014AA032603, 2014AA032609, and 2015AA010801), and the Guangdong Provincial Scientific and Technologic Planning Program, China (Grant No. 2014B010119002).

摘要: The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

关键词: metalorganic chemical vapor deposition, nitrides, semiconducting III-V materials, semiconducting ternary compounds

Abstract: The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.

Key words: metalorganic chemical vapor deposition, nitrides, semiconducting III-V materials, semiconducting ternary compounds

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
77.84.Bw (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.) 61.72.uj (III-V and II-VI semiconductors) 74.70.Dd (Ternary, quaternary, and multinary compounds)