中国物理B ›› 2016, Vol. 25 ›› Issue (4): 48105-048105.doi: 10.1088/1674-1056/25/4/048105
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)
Dong-Yue Han(韩东岳), Hui-Jie Li(李辉杰), Gui-Juan Zhao(赵桂娟), Hong-Yuan Wei(魏鸿源), Shao-Yan Yang(杨少延), Lian-Shan Wang(汪连山)
摘要: The aluminum incorporation efficiencies in nonpolar A-plane and polar C-plane AlGaN films grown by metalorganic vapour phase epitaxy (MOVPE) are investigated. It is found that the aluminum content in A-plane AlGaN film is obviously higher than that in the C-plane sample when the growth temperature is above 1070 ℃. The high aluminum incorporation efficiency is beneficial to fabricating deep ultraviolet optoelectronic devices. Moreover, the influences of the gas inlet ratio, the V/III ratio, and the chamber pressure on the aluminum content are studied. The results are important for growing the AlGaN films, especially nonpolar AlGaN epilayers.
中图分类号: (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))