›› 2014, Vol. 23 ›› Issue (8): 88111-088111.doi: 10.1088/1674-1056/23/8/088111

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced deposition

方靖岳a, 秦石乔a, 张学骜a, 刘东青b, 常胜利a   

  1. a College of Science, National University of Defense Technology, Changsha 410073, China;
    b College of Aerospace and Material Engineering, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2013-12-14 修回日期:2014-03-10 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the Research Project of National University of Defense Technology, China (Grant No. JC13-02-14) and the National Natural Science Foundation of China (Grant No. 11104349).

Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced deposition

Fang Jing-Yue (方靖岳)a, Qin Shi-Qiao (秦石乔)a, Zhang Xue-Ao (张学骜)a, Liu Dong-Qing (刘东青)b, Chang Sheng-Li (常胜利)a   

  1. a College of Science, National University of Defense Technology, Changsha 410073, China;
    b College of Aerospace and Material Engineering, National University of Defense Technology, Changsha 410073, China
  • Received:2013-12-14 Revised:2014-03-10 Online:2014-08-15 Published:2014-08-15
  • Contact: Fang Jing-Yue E-mail:fjy_nudt@yahoo.com.cn
  • Supported by:
    Project supported by the Research Project of National University of Defense Technology, China (Grant No. JC13-02-14) and the National Natural Science Foundation of China (Grant No. 11104349).

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摘要： Focused ion-beam-induced deposition (FIBID) and focused electron-beam-induced deposition (FEBID) are convenient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the conductive lines directly written by focused ion-beam (FIB) and focused electron-beam (FEB) are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ～ 18% to 30% and ～ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.

关键词: electron-beam-induced deposition, ion-beam-induced deposition, annealing, current leakage, single electron transistor

Abstract: Focused ion-beam-induced deposition (FIBID) and focused electron-beam-induced deposition (FEBID) are convenient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the conductive lines directly written by focused ion-beam (FIB) and focused electron-beam (FEB) are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ～ 18% to 30% and ～ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.

Key words: electron-beam-induced deposition, ion-beam-induced deposition, annealing, current leakage, single electron transistor

中图分类号:  (Ion and electron beam-assisted deposition; ion plating)

  • 81.15.Jj
68.35.Dv (Composition, segregation; defects and impurities) 81.40.Ef (Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)