›› 2014, Vol. 23 ›› Issue (8): 88110-088110.doi: 10.1088/1674-1056/23/8/088110

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition

王连锴, 刘仁俊, 杨皓宇, 吕游, 李国兴, 张源涛, 张宝林   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 收稿日期:2014-01-19 修回日期:2014-04-04 出版日期:2014-08-15 发布日期:2014-08-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the State Key Laboratory Program on Integrated Optoelectronics, China (Grant No. IOSKL2012ZZ13).

Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林)   

  1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2014-01-19 Revised:2014-04-04 Online:2014-08-15 Published:2014-08-15
  • Contact: Zhang Yuan-Tao, Zhang Bao-Lin E-mail:zhangyt@jlu.edu.cn;zbl@jlu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the State Key Laboratory Program on Integrated Optoelectronics, China (Grant No. IOSKL2012ZZ13).

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摘要： The initial growth stage of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition (MOCVD) is investigated. The dependence of the nucleation on growth temperature, growth pressure, and vapor V/Ⅲ ratio is studied by means of atomic force microscopy. The nucleation characteristics include the island density, size, and size uniformity distribution. The nucleation mechanism is discussed by the effects of growth temperature, growth pressure, and vapor V/Ⅲ ratio on the density, size, and size uniformity of GaSb islands. With the growth temperature increasing from 500 ℃ to 610 ℃ and the growth pressure increasing from 50 mbar to 1000 mbar (1 mbar = 105 Pa), the island density first increases and then decreases; with the V/Ⅲ ratio increasing from 0.5 to 3, the trend is contrary.

关键词: MOCVD, GaSb, nucleation

Abstract: The initial growth stage of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition (MOCVD) is investigated. The dependence of the nucleation on growth temperature, growth pressure, and vapor V/Ⅲ ratio is studied by means of atomic force microscopy. The nucleation characteristics include the island density, size, and size uniformity distribution. The nucleation mechanism is discussed by the effects of growth temperature, growth pressure, and vapor V/Ⅲ ratio on the density, size, and size uniformity of GaSb islands. With the growth temperature increasing from 500 ℃ to 610 ℃ and the growth pressure increasing from 50 mbar to 1000 mbar (1 mbar = 105 Pa), the island density first increases and then decreases; with the V/Ⅲ ratio increasing from 0.5 to 3, the trend is contrary.

Key words: MOCVD, GaSb, nucleation

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
81.15.Kk (Vapor phase epitaxy; growth from vapor phase) 81.05.Ea (III-V semiconductors) 81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)