›› 2014, Vol. 23 ›› Issue (7): 78102-078102.doi: 10.1088/1674-1056/23/7/078102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH4)2S solution

赵连锋, 谭桢, 王敬, 许军   

  1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2013-11-10 修回日期:2013-12-25 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the State Key Development Program for Basic Research of China (Grant No. 2011CBA00602) and the Major Project of the National Science and Technology of China (Grant No. 2011ZX02708-002).

Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH4)2S solution

Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军)   

  1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China
  • Received:2013-11-10 Revised:2013-12-25 Online:2014-07-15 Published:2014-07-15
  • Contact: Xu Jun E-mail:junxu@tsinghua.edu.cn
  • About author:81.65.Rv; 73.20.At; 81.05.Ea; 77.55.dj
  • Supported by:
    Project supported by the State Key Development Program for Basic Research of China (Grant No. 2011CBA00602) and the Major Project of the National Science and Technology of China (Grant No. 2011ZX02708-002).

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摘要： Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic (NH4)2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy.

关键词: GaSb, metal oxide semiconductor, sulfur passivation

Abstract: Surface passivation with acidic (NH4)2S solution is shown to be effective in improving the interfacial and electrical properties of HfO2/GaSb metal oxide semiconductor devices. Compared with control samples, the samples treated with acidic (NH4)2S solution show great improvements in gate leakage current, frequency dispersion, border trap density, and interface trap density. These improvements are attributed to the enhancing passivation of the substrates, according to analysis from the perspective of chemical mechanism, X-ray photoelectron spectroscopy, and high-resolution cross-sectional transmission electron microscopy.

Key words: GaSb, metal oxide semiconductor, sulfur passivation

中图分类号:  (Passivation)

  • 81.65.Rv
73.20.At (Surface states, band structure, electron density of states) 81.05.Ea (III-V semiconductors) 77.55.dj (For nonsilicon electronics (Ge, III-V, II-VI, organic electronics))