中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/23/6/068502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

卓祥景, 章俊, 李丹伟, 易翰翔, 任志伟, 童金辉, 王幸福, 陈鑫, 赵璧君, 王伟丽, 李述体   

  1. Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materialsand Technology, South China Normal University, Guangzhou 510631, China
  • 收稿日期:2013-09-29 修回日期:2013-11-13 出版日期:2014-06-15 发布日期:2014-06-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 11A52091257).

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Wei-Li (王伟丽), Li Shu-Ti (李述体)   

  1. Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materialsand Technology, South China Normal University, Guangzhou 510631, China
  • Received:2013-09-29 Revised:2013-11-13 Online:2014-06-15 Published:2014-06-15
  • Contact: Li Shu-Ti E-mail:lishuti@scnu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2010B090400456 and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 11A52091257).

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摘要： InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current-voltage (I-V) performance curve, light output-current (L-I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.

关键词: light-emitting diode, InGaN/AlInGaN superlattice, efficiency droop

Abstract: InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current-voltage (I-V) performance curve, light output-current (L-I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.

Key words: light-emitting diode, InGaN/AlInGaN superlattice, efficiency droop

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
78.60.Fi (Electroluminescence) 73.61.Ey (III-V semiconductors)