中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/23/6/068502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
卓祥景, 章俊, 李丹伟, 易翰翔, 任志伟, 童金辉, 王幸福, 陈鑫, 赵璧君, 王伟丽, 李述体
Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Li Dan-Wei (李丹伟), Yi Han-Xiang (易翰翔), Ren Zhi-Wei (任志伟), Tong Jin-Hui (童金辉), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Zhao Bi-Jun (赵璧君), Wang Wei-Li (王伟丽), Li Shu-Ti (李述体)
摘要: InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current-voltage (I-V) performance curve, light output-current (L-I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.
中图分类号: (Light-emitting devices)