Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

doi:10.1088/1674-1056/23/12/127503

中国物理B ›› 2014, Vol. 23 ›› Issue (12): 127503-127503.doi: 10.1088/1674-1056/23/12/127503

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

宁帅, 战鹏, 王炜鹏, 李正操, 张政军

State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

收稿日期:2014-06-06 修回日期:2014-07-25 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51372135), the Research Project of the Chinese Ministry of Education (Grant No. 113007A), and the Tsinghua University Initiative Scientific Research Program.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Ning Shuai (宁帅), Zhan Peng (战鹏), Wang Wei-Peng (王炜鹏), Li Zheng-Cao (李正操), Zhang Zheng-Jun (张政军)

State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Received:2014-06-06 Revised:2014-07-25 Online:2014-12-15 Published:2014-12-15
Contact: Zhang Zheng-Jun E-mail:zjzhang@tsinghua.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51372135), the Research Project of the Chinese Ministry of Education (Grant No. 113007A), and the Tsinghua University Initiative Scientific Research Program.

摘要/Abstract

摘要：

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ～ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ～ 320 ℃, followed by annealing at 650 ℃ in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

关键词: magnetic semiconductors, magnetic annealing, defects, zinc oxides

Abstract:

Key words: magnetic semiconductors, magnetic annealing, defects, zinc oxides

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.60.Nt (Magnetic annealing and temperature-hysteresis effects) 61.72.jd (Vacancies) 78.55.Et (II-VI semiconductors)

宁帅, 战鹏, 王炜鹏, 李正操, 张政军. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field[J]. 中国物理B, 2014, 23(12): 127503-127503.

Ning Shuai (宁帅), Zhan Peng (战鹏), Wang Wei-Peng (王炜鹏), Li Zheng-Cao (李正操), Zhang Zheng-Jun (张政军). Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field[J]. Chin. Phys. B, 2014, 23(12): 127503-127503.

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Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

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