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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
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Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Chunzao Wang(王春早), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench[J]. 中国物理B, 2022, 31(4): 47304-047304. |
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Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements[J]. 中国物理B, 2022, 31(4): 46104-046104. |
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Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302. |
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Zhi-Gang Wang(汪志刚), Yun-Feng Gong(龚云峰), and Zhuang Liu(刘壮). Modeling of high permittivity insulator structure with interface charge by charge compensation[J]. 中国物理B, 2022, 31(2): 28501-028501. |
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Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503. |
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Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Enhanced single photon emission in silicon carbide with Bull's eye cavities[J]. 中国物理B, 2022, 31(10): 104206-104206. |
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Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰). Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness[J]. 中国物理B, 2021, 30(6): 67303-067303. |
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Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305. |
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Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A super-junction SOI-LDMOS with low resistance electron channel[J]. 中国物理B, 2021, 30(5): 57303-057303. |
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Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Improved 4H-SiC UMOSFET with super-junction shield region[J]. 中国物理B, 2021, 30(5): 58502-058502. |
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费新星, 王颖, 罗昕, 于成浩. Simulation study of high voltage GaN MISFETs with embedded PN junction[J]. 中国物理B, 2020, 29(8): 80701-080701. |
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吴丽娟, 朱琳, 陈星. Variable-K double trenches SOI LDMOS with high-concentration P-pillar[J]. 中国物理B, 2020, 29(5): 57701-057701. |