中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77306-077306.doi: 10.1088/1674-1056/22/7/077306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate

常虎东, 孙兵, 薛百清, 刘桂明, 赵威, 王盛凯, 刘洪刚   

  1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2012-12-18 修回日期:2013-02-05 出版日期:2013-06-01 发布日期:2013-06-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

Effect of Si-doped In0.49Ga0.51P barrier layer on the device performance of In0.4Ga0.6As MOSFETs grown onsemi-insulating GaAs substrate

Chang Hu-Dong (常虎东), Sun Bing (孙兵), Xue Bai-Qing (薛百清), Liu Gui-Ming (刘桂明), Zhao Wei (赵威), Wang Sheng-Kai (王盛凯), Liu Hong-Gang (刘洪刚)   

  1. Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • Received:2012-12-18 Revised:2013-02-05 Online:2013-06-01 Published:2013-06-01
  • Contact: Liu Hong-Gang E-mail:liuhonggang@ime.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2010CB327501), the National Natural Science Foundation of China (Grant No. 61106095), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2011ZX02708-003).

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摘要： In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs (gate length 2 μm) with In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/(V·s).

关键词: metal-oxide-semiconductor field-effect transistor, InGaAs, InGaP, Al2O3

Abstract: In0.4Ga0.6As channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with and without Si-doped In0.49Ga0.51P barrier layer grown on semi-insulating GaAs substrates have been investigated for the first time. Compared with the In0.4Ga0.6As MOSFETs without In0.49Ga0.51P barrier layer, In0.4Ga0.6As MOSFETs with In0.49Ga0.51P barrier layer show higher drive current, higher transconductance, lower gate leakage current, lower subthreshold swing, and higher effective channel mobility. These In0.4Ga0.6As MOSFETs (gate length 2 μm) with In0.49Ga0.51P barrier layer exhibit a high drive current of 117 mA/mm, a high transconductance of 71.9 mS/mm, and a maximum effective channel mobility of 1266 cm2/(V·s).

Key words: metal-oxide-semiconductor field-effect transistor, InGaAs, InGaP, Al2O3

中图分类号:  (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

  • 73.40.Qv
71.55.Eq (III-V semiconductors)