Ultraviolet emissions realized in ZnO via avalanche multiplication process

doi:10.1088/1674-1056/22/7/077307

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77307-077307.doi: 10.1088/1674-1056/22/7/077307

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Ultraviolet emissions realized in ZnO via avalanche multiplication process

于吉^{a b}, 单崇新^a, 申赫^{a b}, 张祥伟^{a b}, 王双鹏^a, 申德振^a

a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2013-02-26 修回日期:2013-03-30 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CB302005), the National Natural Science Foundation of China (Grant Nos. 11074248, 11104265, 11134009, and 61177040), and the Science and Technology Developing Project of Jilin Province, China (Grant No. 20111801).

Ultraviolet emissions realized in ZnO via avalanche multiplication process

Yu Ji (于吉)^{a b}, Shan Chong-Xin (单崇新)^a, Shen He (申赫)^{a b}, Zhang Xiang-Wei (张祥伟)^{a b}, Wang Shuang-Peng (王双鹏)^a, Shen De-Zhen (申德振)^a

a State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;
b University of Chinese Academy of Sciences, Beijing 100049, China

Received:2013-02-26 Revised:2013-03-30 Online:2013-06-01 Published:2013-06-01
Contact: Shan Chong-Xin E-mail:shancx@ciomp.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CB302005), the National Natural Science Foundation of China (Grant Nos. 11074248, 11104265, 11134009, and 61177040), and the Science and Technology Developing Project of Jilin Province, China (Grant No. 20111801).

摘要/Abstract

摘要： Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer, thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The results reported in this paper demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, thus may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issues of ZnO.

关键词: avalanche multiplication, wide bandgap semiconductor, light-emitting devices

Abstract: Au/MgO/ZnO/MgO/Au structures have been designed and constructed in this study. Under a bias voltage, a carrier avalanche multiplication will occur via an impact ionization process in the MgO layer. The generated holes will be drifted into the ZnO layer, and recombine radiatively with the electrons in the ZnO layer, thus obvious emissions at around 387 nm coming from the near-band-edge emission of ZnO will be observed. The results reported in this paper demonstrate the ultraviolet (UV) emission realized via a carrier multiplication process, thus may provide an alternative route to efficient UV emissions by bypassing the challenging p-type doping issues of ZnO.

Key words: avalanche multiplication, wide bandgap semiconductor, light-emitting devices

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.60.Jb (Light-emitting devices) 73.61.Ga (II-VI semiconductors) 78.60.Fi (Electroluminescence)

于吉, 单崇新, 申赫, 张祥伟, 王双鹏, 申德振. Ultraviolet emissions realized in ZnO via avalanche multiplication process[J]. 中国物理B, 2013, 22(7): 77307-077307.

Yu Ji (于吉), Shan Chong-Xin (单崇新), Shen He (申赫), Zhang Xiang-Wei (张祥伟), Wang Shuang-Peng (王双鹏), Shen De-Zhen (申德振). Ultraviolet emissions realized in ZnO via avalanche multiplication process[J]. Chin. Phys. B, 2013, 22(7): 77307-077307.

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Ultraviolet emissions realized in ZnO via avalanche multiplication process

Ultraviolet emissions realized in ZnO via avalanche multiplication process

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