中国物理B ›› 2009, Vol. 18 ›› Issue (11): 5029-5033.doi: 10.1088/1674-1056/18/11/069

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High-temperature current conduction through three kinds of Schottky diodes

李菲, 张小玲, 段毅, 谢雪松, 吕长志   

  1. Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2009-02-13 修回日期:2009-05-13 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the Foundation of Key Laboratory of General Armament Department, China (Grant No 5132030102QT0101).

High-temperature current conduction through three kinds of Schottky diodes

Li Fei(李菲), Zhang Xiao-Ling(张小玲), Duan Yi(段毅), Xie Xue-Song(谢雪松), and ü Chang-Zhi(吕长志)   

  1. Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • Received:2009-02-13 Revised:2009-05-13 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the Foundation of Key Laboratory of General Armament Department, China (Grant No 5132030102QT0101).

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摘要： Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I--V--T measurements ranging from 300 to 523~K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.

Abstract: Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I--V--T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density.

Key words: Schottky diodes, Schottky barrier height, ideality factor, reverse current

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices) 79.40.+z (Thermionic emission) 73.40.Gk (Tunneling) 79.70.+q (Field emission, ionization, evaporation, and desorption)