Comparative study of electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes

doi:10.1088/1674-1056/22/6/068402

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68402-068402.doi: 10.1088/1674-1056/22/6/068402

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes

Adem Tataroğlu

Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey

收稿日期:2012-09-18 修回日期:2012-11-01 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes

Adem Tataroğlu

Department of Physics, Faculty Sciences, Gazi University, 06500, Ankara, Turkey

Received:2012-09-18 Revised:2012-11-01 Online:2013-05-01 Published:2013-05-01
Contact: Adem Tataroğlu E-mail:ademt@gazi.edu.tr
Supported by:
Project supported by Gazi University Scientific Research Project (BAP), FEF. 05/2012-15.

摘要/Abstract

摘要： In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.

关键词: Au/n-Si and Au/Si₃N₄/n-Si type diode, I-V and C-V measurements, ideality factor, barrier height

Abstract: In this paper, the electrical parameters of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. Experimental results show that the rectifying ratios of MS and MIS diode at ± 5 V are found to be 1.25×10³ and 1.27×10⁴, respectively. The main electrical parameters of MS and MIS diode, such as the zero-bias barrier height (Φ _Bo) and ideality factor (n) are calculated to be 0.51 eV (I-V), 0.53 eV (C-V), and 4.43, and 0.65 eV (I-V), 0.70 eV (C-V), and 3.44, respectively. Also, the energy density distribution profile of the interface states (N_ss) is obtained from the forward bias I-V. In addition, the values of series resistance (R_s) for the two diodes are calculated from Cheung's method and Ohm's law.

Key words: Au/n-Si and Au/Si₃N₄/n-Si type diode, I-V and C-V measurements, ideality factor, barrier height

中图分类号: (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

84.37.+q

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.20.-r (Electron states at surfaces and interfaces) 73.20.At (Surface states, band structure, electron density of states)

Adem Tataroğlu. Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes[J]. 中国物理B, 2013, 22(6): 68402-068402.

Adem Tataroğlu. Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes[J]. Chin. Phys. B, 2013, 22(6): 68402-068402.

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Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes

Comparative study of electrical properties of Au/n-Si (MS) and Au/Si₃N₄/n-Si (MIS) Schottky diodes

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