Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

doi:10.1088/1674-1056/21/11/117308

中国物理B ›› 2012, Vol. 21 ›› Issue (11): 117308-117308.doi: 10.1088/1674-1056/21/11/117308

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

王骏成, 杜刚, 魏康亮, 张兴, 刘晓彦

Institute of Microelectronics, Peking University, Beijing 100871, China

收稿日期:2012-03-07 修回日期:2012-04-23 出版日期:2012-10-01 发布日期:2012-10-01
基金资助:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604).

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

Wang Jun-Cheng (王骏成), Du Gang (杜刚), Wei Kang-Liang (魏康亮), Zhang Xing (张兴), Liu Xiao-Yan (刘晓彦 )

Institute of Microelectronics, Peking University, Beijing 100871, China

Received:2012-03-07 Revised:2012-04-23 Online:2012-10-01 Published:2012-10-01
Contact: Du Gang E-mail:gangdu@pku.edu.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604).

摘要/Abstract

摘要： In this paper, we investigate the performance of bulk fin field effect transistor (FinFET) through a three-dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO₂ interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.

关键词: bulk fin field effect transistor (FinFET), three-dimensional (3D) Monte Carlo simulation, surface roughness scattering, substrate bias effect

Abstract: In this paper, we investigate the performance of bulk fin field effect transistor (FinFET) through a three-dimensional (3D) full band Monte Carlo simulator with quantum correction. Several scattering mechanisms, such as the acoustic and optical phonon scattering, the ionized impurity scattering, the impact ionization scattering and the surface roughness scattering are considered in our simulator. The effects of the substrate bias and the surface roughness scattering near the Si/SiO₂ interface on the performance of bulk FinFET are mainly discussed in our work. Our results show that the on-current of bulk FinFET is sensitive to the surface roughness and that we can reduce the substrate leakage current by modulating the substrate bias voltage.

Key words: bulk fin field effect transistor (FinFET), three-dimensional (3D) Monte Carlo simulation, surface roughness scattering, substrate bias effect

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

71.15.Pd (Molecular dynamics calculations (Car-Parrinello) and other numerical simulations) 72.10.-d (Theory of electronic transport; scattering mechanisms)

王骏成, 杜刚, 魏康亮, 张兴, 刘晓彦 . Three-dimensional Monte Carlo simulation of bulk fin field effect transistor[J]. 中国物理B, 2012, 21(11): 117308-117308.

Wang Jun-Cheng (王骏成), Du Gang (杜刚), Wei Kang-Liang (魏康亮), Zhang Xing (张兴), Liu Xiao-Yan (刘晓彦 ). Three-dimensional Monte Carlo simulation of bulk fin field effect transistor[J]. Chin. Phys. B, 2012, 21(11): 117308-117308.

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Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

Three-dimensional Monte Carlo simulation of bulk fin field effect transistor

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