Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

doi:10.1088/1674-1056/20/7/077301

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77301-077301.doi: 10.1088/1674-1056/20/7/077301

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

汪明, 谷永先, 季海铭, 杨涛, 王占国

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-12-15 修回日期:2011-02-01 出版日期:2011-07-15 发布日期:2011-07-15

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Wang Ming(汪明), Gu Yong-Xian(谷永先), Ji Hai-Ming(季海铭), Yang Tao(杨涛)^†, and Wang Zhan-Guo(王占国)

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2010-12-15 Revised:2011-02-01 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： We investigate the band structure of a compressively strained In(Ga)As/In_0.53Ga_0.47As quantum well (QW) on an InP substrate using the eight-band k·p theory. Aiming at the emission wavelength around 2.33 μm, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs /In_0.53Ga_0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.

Abstract: We investigate the band structure of a compressively strained In(Ga)As/In_0.53Ga_0.47As quantum well (QW) on an InP substrate using the eight-band k·p theory. Aiming at the emission wavelength around 2.33 μm, we discuss the influences of temperature, strain and well width on the band structure and on the emission wavelength of the QW. The wavelength increases with the increase of temperature, strain and well width. Furthermore, we design an InAs /In_0.53Ga_0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.

Key words: band structure, eight-band k·p theory, strained quantum well, peak emission wavelength

中图分类号: (Quantum wells)

73.21.Fg

78.67.De (Quantum wells) 78.20.Bh (Theory, models, and numerical simulation)

汪明, 谷永先, 季海铭, 杨涛, 王占国. Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model[J]. 中国物理B, 2011, 20(7): 77301-077301.

Wang Ming(汪明), Gu Yong-Xian(谷永先), Ji Hai-Ming(季海铭), Yang Tao(杨涛), and Wang Zhan-Guo(王占国). Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model[J]. Chin. Phys. B, 2011, 20(7): 77301-077301.

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Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band model

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