Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

doi:10.1088/1674-1056/ab592c

中国物理B ›› 2020, Vol. 29 ›› Issue (1): 17301-017301.doi: 10.1088/1674-1056/ab592c

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Yi-Fu Wang(王一夫), Mussaab I Niass, Fang Wang(王芳), Yu-Huai Liu(刘玉怀)

1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China

收稿日期:2019-06-12 修回日期:2019-10-15 出版日期:2020-01-05 发布日期:2020-01-05
通讯作者: Fang Wang, Yu-Huai Liu E-mail:iefwang@zzu.edu.cn;ieyhliu@zzu.edu.cn
基金资助:
Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Yi-Fu Wang(王一夫)^1,2,3, Mussaab I Niass^1,2,3, Fang Wang(王芳)^1,2,3, Yu-Huai Liu(刘玉怀)^1,2,3

1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China

Received:2019-06-12 Revised:2019-10-15 Online:2020-01-05 Published:2020-01-05
Contact: Fang Wang, Yu-Huai Liu E-mail:iefwang@zzu.edu.cn;ieyhliu@zzu.edu.cn
Supported by:
Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).

摘要/Abstract

摘要： The design of the active region structures, including the modifications of structures of the quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN laser diode (LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion, and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content AlGaN EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.

关键词: radiative recombination rate, step-like quantum barrier, aluminum-content-graded EBL

Abstract: The design of the active region structures, including the modifications of structures of the quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN laser diode (LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion, and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content AlGaN EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.

Key words: radiative recombination rate, step-like quantum barrier, aluminum-content-graded EBL

中图分类号: (Quantum wells)

73.21.Fg

73.61.Ey (III-V semiconductors) 78.60.Fi (Electroluminescence)

王一夫, Mussaab I Niass, 王芳, 刘玉怀. Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer[J]. 中国物理B, 2020, 29(1): 17301-017301.

Yi-Fu Wang(王一夫), Mussaab I Niass, Fang Wang(王芳), Yu-Huai Liu(刘玉怀). Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer[J]. Chin. Phys. B, 2020, 29(1): 17301-017301.

参考文献 24

[1]	Wunderer T, Chua C L, Yang Z, Northrup J E, Johnson N M, Garrett G A, Shen H and Wraback M 2011 Appl. Phys. Express 4 092101 doi: 10.1143/APEX.4.092101
[2]	Abe S, Sato S, Ito E, Tsukuda M, Tomiyama M and Ohno E 2002 Jpn. J. Appl. Phys. 41 1704 doi: 10.1143/JJAP.41.1704
[3]	Yoshida H, Yamashita Y, Kuwabara M and Kan H 2008 Appl. Phys. Lett. 93 241106 doi: 10.1063/1.3050539
[4]	Yang W, Li D, Liu N, Chen Z, Wang L, Liu L, Li L, Wan C, Chen W, Hu X and Du W 2012 Appl. Phys. Lett. 100 031105 doi: 10.1063/1.3678197
[5]	Bojarska A, Goss J, Stanczyk S, Makarowa I, Schiavon D, Czernecki R, Suski T and Perlin P 2018 Superlattices Microstruct. 116 114 doi: 10.1016/j.spmi.2018.02.016
[6]	Ren Z, Lu Y, Yao H, Sun H, Liao C, Dai J, Chen C, Ryou J, Yan J, Wang J, Li J and Li X 2019 IEEE Photon. J. 11 8200511
[7]	Shervin S, Oh S K, Park H J, Lee K, Asadirad M, Kim S, Kim J, Pouladi S, Lee S and Li X 2018 J. Phys. D: Appl. Phys. 51 105105 doi: 10.1088/1361-6463/aaaabf
[8]	Kim M, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. 91 183507 doi: 10.1063/1.2800290
[9]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1996 Appl. Phys. Lett. 69 4056 doi: 10.1063/1.117816
[10]	Piprek J and Nakamura S 2002 IEEE Lester Eastman Conference on High Performance Devices, August 6-8, 2005, Newark, Delaware, p. 254
[11]	Zhang Y Y and Yin Y A 2011 Appl. Phys. Lett. 99 221103 doi: 10.1063/1.3653390
[12]	Alahyarizadeh G, Hassan Z, Thahab S M, Yam F K and Ghazai A J 2013 Optik 124 6765 doi: 10.1016/j.ijleo.2013.05.080
[13]	Ghazai A J, Thahab S M, Hassan H A and Hassan Z 2011 Opt. Express 19 9245 doi: 10.1364/OE.19.009245
[14]	Lee S, Cho S Y, Ryu H Y, Son J K, Paek H S, Sakong T, Jang T, Choi K K, Ha K H, Ha M H, Yang M H, Nam O H and Park Y 2006 Appl. Phys. Lett. 88 111101 doi: 10.1063/1.2185251
[15]	Zhang N, Liu Z, Wei T, Zhang L, Wei X, Wang X, Lu H, Li J and Wang J 2012 Appl. Phys. Lett. 100 053504 doi: 10.1063/1.3681797
[16]	Zhang Y, Kao T, Liu J, Lochner Z, Kim S, Ryou J, Dupuis R D and Shen S 2011 J. Appl. Phys. 109 083115 doi: 10.1063/1.3581080
[17]	Yin Y A, Wang N, Li S, Zhang Y and Fan G 2015 Appl. Phys. A 119 41 doi: 10.1007/s00339-015-9018-2
[18]	Zhang Y, Yu L, Li K, Pi H, Diao J, Wang X, Shen Y, Zhang C, Hu W, Song W and Li S 2015 Superlattices Microstruct. 82 151 doi: 10.1016/j.spmi.2015.02.004
[19]	Fan X, Sun H, Li X, Sun H, Zhang C, Zhang Z and Guo Z 2015 Superlattices Microstruct. 88 467 doi: 10.1016/j.spmi.2015.10.003
[20]	Liu C, Ren Z, Chen X, Zhao B, Wang X and Li S 2014 IEEE Photon. Technol. Lett. 26 1368 doi: 10.1109/LPT.2014.2325598
[21]	Lu L, Zhang Y, Xu F J, Ding G G and Liu Y H 2018 Superlattices Microstruct. 118 55 doi: 10.1016/j.spmi.2018.04.011
[22]	Yang W, Li D, He J and Hu X 2013 Phys. Status Solidi C 10 346 doi: 10.1002/pssc.201200637
[23]	Satter M M, Lochner Z, Member S, Kao T, Liu Y, Li X, Shen S, Dupuis R D and Yoder P D 2014 IEEE J. Quantum Electron. 50 166 doi: 10.1109/JQE.2014.2300757
[24]	Wang Y, Niass M I, Wang F and Liu Y 2019 Chin. Phys. Lett. 36 057301 doi: 10.1088/0256-307X/36/5/057301

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 24

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Ying-Zhe Wang(王颖哲), Mao-Sen Wang(王茂森), Ning Hua(化宁), Kai Chen(陈凯), Zhi-Min He(何志敏), Xue-Feng Zheng(郑雪峰), Pei-Xian Li(李培咸), Xiao-Hua Ma(马晓华), Li-Xin Guo(郭立新), and Yue Hao(郝跃). Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes[J]. 中国物理B, 2022, 31(6): 68101-068101.
[2]	Zhuang-Zhuang Zhao(赵壮壮), Meng Xun(荀孟), Guan-Zhong Pan(潘冠中), Yun Sun(孙昀), Jing-Tao Zhou(周静涛), and De-Xin Wu(吴德馨). Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers[J]. 中国物理B, 2022, 31(3): 34208-034208.
[3]	郑湖颖, 陈智阳, 朱海, 汤梓荧, 王亚琪, 韦海园, 单崇新. Dispersion of exciton-polariton based on ZnO/MgZnO quantum wells at room temperature[J]. 中国物理B, 2020, 29(9): 97302-097302.
[4]	韩智强, 宋丽颖, 昝宇海, 班士良. Exciton optical absorption in asymmetric ZnO/ZnMgO double quantum wells with mixed phases[J]. 中国物理B, 2020, 29(7): 77104-077104.
[5]	郭娇欣, 丁杰, 莫春兰, 郑畅达, 潘拴, 江风益. Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate[J]. 中国物理B, 2020, 29(4): 47303-047303.
[6]	陈平, 赵德刚, 江德生, 杨静, 朱建军, 刘宗顺, 刘炜, 梁锋, 刘双韬, 邢瑶, 张立群. Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift[J]. 中国物理B, 2020, 29(3): 34206-034206.
[7]	H Noverola-Gamas, L M Gaggero-Sager, O Oubram. Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells[J]. 中国物理B, 2019, 28(12): 124207-124207.
[8]	吴晓光. Optical response of an inverted InAs/GaSb quantum well in an in-plane magnetic field[J]. 中国物理B, 2019, 28(10): 107302-107302.
[9]	张天然, 方芳, 王小兰, 张建立, 吴小明, 潘栓, 刘军林, 江风益. Aging mechanism of GaN-based yellow LEDs with V-pits[J]. 中国物理B, 2019, 28(6): 67305-067305.
[10]	李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 吴海燕, 马紫光, 王禄, 贾海强, 王文新, 陈弘. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. 中国物理B, 2018, 27(9): 97104-097104.
[11]	杨景景, 方庆清, 杜文汉, 董大舜. High mobility ultrathin ZnO p-n homojunction modulated by Zn_0.85Mg_0.15O quantum barriers[J]. 中国物理B, 2018, 27(3): 37804-037804.
[12]	马淑芳, 屈媛, 班士良. Intersubband optical absorption of electrons in double parabolic quantum wells of Al_xGa_1-xAs/Al_yGa_1-yAs[J]. 中国物理B, 2018, 27(2): 27103-027103.
[13]	王光辉, 张金珂. Optimizing effective phase modulation in coupled double quantum well Mach-Zehnder modulators[J]. 中国物理B, 2018, 27(2): 27801-027801.
[14]	郑卫民, 丛伟艳, 李素梅, 王爱芳, 李斌, 黄海北. Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. 中国物理B, 2018, 27(1): 17302-017302.
[15]	李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 马紫光, 吴海燕, 王禄, 贾海强, 王文新, 陈弘. Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure[J]. 中国物理B, 2017, 26(8): 87311-087311.