Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells

doi:10.1088/1674-1056/ab5278

中国物理B ›› 2019, Vol. 28 ›› Issue (12): 124207-124207.doi: 10.1088/1674-1056/ab5278

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells

H Noverola-Gamas, L M Gaggero-Sager, O Oubram

1 Instituto de Investigaciones en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México;
2 División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Cunduacán 8660, México;
3 Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México;
4 Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México

收稿日期:2019-09-25 修回日期:2019-10-26 出版日期:2019-12-05 发布日期:2019-12-05
通讯作者: L M Gaggero-Sager E-mail:lgaggero@uaem.mx
基金资助:
Project supported by PISA 2016-1 UJAT and PRODEP Folio UJAT-245 of México.

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells

H Noverola-Gamas^1,2, L M Gaggero-Sager³, O Oubram⁴

1 Instituto de Investigaciones en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México;
2 División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Cunduacán 8660, México;
3 Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México;
4 Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Cuernavaca 62209, México

Received:2019-09-25 Revised:2019-10-26 Online:2019-12-05 Published:2019-12-05
Contact: L M Gaggero-Sager E-mail:lgaggero@uaem.mx
Supported by:
Project supported by PISA 2016-1 UJAT and PRODEP Folio UJAT-245 of México.

摘要/Abstract

摘要： In the framework of the Thomas-Fermi (TF) approach, a model for the p-type double-δ-doped (DDD) system in GaAs is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped GaAs.

关键词: double delta-doping, p-type GaAs layers, electronic structure, Thomas-Fermi approach, nonlinear optical properties

Abstract: In the framework of the Thomas-Fermi (TF) approach, a model for the p-type double-δ-doped (DDD) system in GaAs is presented. This model, unlike other works in the literature, takes into account that the Poisson equation associated with the system is nonlinear. The electronic structure is calculated for heavy and light holes. The changes in the electronic structure result of the distance d between the doped layers are studied. In particular, the relative absorption coefficient as well as the relative refractive index change is calculated as a function of the incident photon energy for heavy holes. The effect of the interlayer distance exhibits, in the absorption coefficient, a red shift of the peak position and a decrease in amplitude when the distance increases. In addition, the relative refractive index change node has a red shift as well as the interlayer distance increases. The calculations show that the effect of the separation between layers has a greater influence on the linear terms. These results are very important for theoretical calculations and engineering of optical and electronic devices based in δ-doped GaAs.

Key words: double delta-doping, p-type GaAs layers, electronic structure, Thomas-Fermi approach, nonlinear optical properties

中图分类号: (Effects of atomic coherence on propagation, absorption, and Amplification of light; electromagnetically induced transparency and Absorption)

42.50.Gy

78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 73.22.-f (Electronic structure of nanoscale materials and related systems) 73.21.Fg (Quantum wells)

H Noverola-Gamas, L M Gaggero-Sager, O Oubram. Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells[J]. 中国物理B, 2019, 28(12): 124207-124207.

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Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells

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