中国物理B ›› 2011, Vol. 20 ›› Issue (6): 68103-068103.doi: 10.1088/1674-1056/20/6/068103

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Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates

汪巍, 苏少坚, 郑军, 张广泽, 左玉华, 成步文, 王启明   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2010-11-13 修回日期:2010-12-10 出版日期:2011-06-15 发布日期:2011-06-15
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Basic Research Program of China (Grant No. 2007CB613404), the National Natural Science Foundation of China (Grant Nos. 60906035 and 61036003), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01).

Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates

Wang Wei (汪巍), Su Shao-Jian (苏少坚), Zheng Jun (郑军), Zhang Guang-Ze (张广泽), Zuo Yu-Hua (左玉华), Cheng Bu-Wen (成步文), Wang Qi-Ming (王启明)   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2010-11-13 Revised:2010-12-10 Online:2011-06-15 Published:2011-06-15
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z415), the National Basic Research Program of China (Grant No. 2007CB613404), the National Natural Science Foundation of China (Grant Nos. 60906035 and 61036003), and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. ISCAS2009T01).

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摘要： Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a χmin value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.

关键词: GeSn alloys, strained, strain-relaxed, molecular beam epitaxy

Abstract: Epitaxial Ge1-xSnx alloys are grown separately on a Ge-buffer/Si(100) substrate and directly on a Si(100) substrate by molecular beam epitaxy (MBE) at low temperature. In the case of the Ge buffer/Si(100) substrate, a high crystalline quality strained Ge0.97Sn0.03 alloy is grown, with a $\chi_{\min}$ value of 6.7% measured by channeling and random Rutherford backscattering spectrometry (RBS), and a surface root-mean-square (RMS) roughness of 1.568 nm obtained by atomic force microscopy (AFM). In the case of the Si(100) substrate, strain-relaxed Ge0.97Sn0.03 alloys are epitaxially grown at 150℃-300℃, with the degree of strain relaxation being more than 96%. The X-ray diffraction (XRD) and AFM measurements demonstrate that the alloys each have a good crystalline quality and a relatively flat surface. The predominant defects accommodating the large misfit are Lomer edge dislocations at the interface, which are parallel to the interface plane and should not degrade electrical properties and device performance.

Key words: GeSn alloys, strained, strain-relaxed, molecular beam epitaxy

中图分类号:  (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

  • 81.15.Gh
81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 68.55.-a (Thin film structure and morphology)