Thickness optimization of Mo films for Cu(InGa)Se2 solar cell applications

doi:10.1088/1674-1056/20/6/068102

中国物理B ›› 2011, Vol. 20 ›› Issue (6): 68102-068102.doi: 10.1088/1674-1056/20/6/068102

Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications

敖建平¹, 孙云¹, 赵彦民², 刘兴江², 李微³

(1)Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China; (2)National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China; (3)National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China; School of Material Science and Engineering, Tianjin University, Tianjin 300071, China

收稿日期:2010-10-26 修回日期:2010-12-09 出版日期:2011-06-15 发布日期:2011-06-15

Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications

Li Wei (李微)^ab, Zhao Yan-Min (赵彦民)^a, Liu Xing-Jiang (刘兴江)^a, Ao Jian-Ping (敖建平)^c, Sun Yun (孙云)^c

^a National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China; ^b School of Material Science and Engineering, Tianjin University, Tianjin 300071, China; ^c Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

Received:2010-10-26 Revised:2010-12-09 Online:2011-06-15 Published:2011-06-15

摘要/Abstract

摘要： Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se₂ solar cell can reach a conversion efficiency of 13.15%.

关键词: Mo film, Cu(InGa)Se₂, back contact

Abstract: Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se₂ solar cell can reach a conversion efficiency of 13.15%.

Key words: Mo film, Cu(InGa)Se₂, back contact

中图分类号: (Deposition by sputtering)

81.15.Cd

李微, 赵彦民, 刘兴江, 敖建平, 孙云. Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications[J]. 中国物理B, 2011, 20(6): 68102-068102.

Li Wei (李微), Zhao Yan-Min (赵彦民), Liu Xing-Jiang (刘兴江), Ao Jian-Ping (敖建平), Sun Yun (孙云). Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications[J]. Chin. Phys. B, 2011, 20(6): 68102-068102.

参考文献 25

[1]	Ramanathan K and Miguel A C 2003 Photovoltaics Res. Appl. 11 225
[2]	Ward J S, Ramanathan K, Hasoon F S, Coutts T J, Keane J, Contreras M A, Moriarty T and Noufi R 2002 Photovoltaics Res. Appl. 10 41
[3]	Granath K, Rockett A, Bodegard M, Nender C and Stolt L 1995 13th European Photovoltaic Solar Energy Conference, October 23-27 Nice, France, p. 1983
[4]	Gordillo G, Grizalez M and Hernandez L C 1998 Solar Energy Materials and Solar Cells 51 327
[5]	Li W, Ao J P, He Q, Liu F F, Li F Y, Li C J and Sun Y 2007 Acta Phys. Sin. 56 5009 (in Chinese)
[6]	Hudson C and Somekh R E 1996 J. Vac. Sci. Technol. A 14 2169
[7]	Kamminga J D, Keijser T H, Delhez R and Mittemeijer E J 1998 Thin Solid Films 317 169
[8]	Kohara N, Negami T, Nishitani M and Wada T 1995 Jpn. J. Appl. Phys. 34 L1141
[9]	Wada T, Kohara N, Nishiwaki S and Negami T 2001 Thin Solid Films 387 118
[10]	Zhang L, He Q, Xu C M, Xue Y M, Li C J and Sun Y 2008 Chin. Phys. B 17 3138
[11]	Xu C M, Sun Y, Li F Y, Zhang L, Xue Y M, He Q and Liu H T 2007 Chin. Phys. 16 788
[12]	Sarioglu C, Demirler U, Kursat K M and Urgen M 2005 Surface & Coatings Technology 190 238
[13]	Vink T J, Somers M A J, Daams J L C and Dirks A G 1991 J. Appl. Phys. 70 4301
[14]	Dietrich E W, Robert B G and Tang L H 1985 Surf. Sci. 162 114
[15]	Hofman D W and Gaerttner M R 1980 J. Vac. Sci. Technol. 17 425
[16]	Lee H W, Lau S P, Wang Y G, Tay B K and Hng H H 2004 Thin Solid Films 458 15
[17]	Sakaguchi K, Iwasa S and Yoshino Y 1998 Vacuum 51 677
[18]	Chang J F, Shen C C and Hon M H 2003 Ceramics International 29 245
[19]	Chen G F, Yan W B, Chen H J, Cui H Y and Li Y X 2009 Chin. Phys. B 18 2988
[20]	Chen G F, Yan W B, Chen H J, Li X H and Li Y X 2009 Chin. Phys. B 18 293
[21]	Rockett A, Britt J S, Gillespie T, Marshall C, Al Jassim M M, Hasoon F, Matson R and Basol B 2000 Thin Solid Films 372 212
[22]	Bodeg M, Granath K and Stolt L 2000 Thin Solid Films 361-362 9
[23]	Lyahovitskaya V, Feldman Y, Gartsman K, Cohen H, Cytermann C and Cahen D 2002 J. Appl. Phys. 91 4205
[24]	Schroeder D J and Rockett A A 1997 J. Appl. Phys. 82 4982
[25]	Schuler S, Siebentritt S, Nishiwaki S, Rega N, Beckmann J, Brehme S and Lux-Steiner M C 2004 Phys. Rev. B 69 045210

Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications

Thickness optimization of Mo films for Cu(InGa)Se₂ solar cell applications

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 25

相关文章 4

Metrics

本文评价

推荐阅读 0

[1]	令志斌, 张庆业, 杨成鹏, 李晓天, 梁文双, 王乙潜, 杨怀文, 孙继荣. Evolution of electrical and magnetotransport properties with lattice strain in La_0.7Sr_0.3MnO₃ film[J]. 中国物理B, 2020, 29(9): 96802-096802.
[2]	包建辉, 陶科, 林苡任, 贾锐, 刘爱民. The n-type Si-based materials applied on the front surface of IBC-SHJ solar cells[J]. 中国物理B, 2019, 28(9): 98201-098201.
[3]	张巍, 陈晨, 贾锐, 孙昀, 邢钊, 金智, 刘新宇, 刘晓文. Analysis of the interdigitated back contact solar cells: The n-type substrate lifetime and wafer thickness[J]. 中国物理B, 2015, 24(10): 108801-108801.
[4]	王钊, 黎兵, 郑旭, 谢婧, 黄征, 刘才, 冯良桓, 郑家贵. Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact[J]. 中国物理B, 2010, 19(2): 27303-027303.