Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

doi:10.1088/1674-1056/20/5/058502

中国物理B ›› 2011, Vol. 20 ›› Issue (5): 58502-058502.doi: 10.1088/1674-1056/20/5/058502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

徐小波, 张鹤鸣, 胡辉勇, 马建立

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-12-24 修回日期:2011-01-12 出版日期:2011-05-15 发布日期:2011-05-15
基金资助:
Project supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaa

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-12-24 Revised:2011-01-12 Online:2011-05-15 Published:2011-05-15
Supported by:
Project supported by the National Ministries and Commissions (Grant Nos. 51308040203 and 6139801), the Fundamental Research Funds for the Central Universities of China (Grant Nos. 72105499 and 72104089), and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2010JQ8008).

摘要/Abstract

摘要： Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base–collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.

Abstract: Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) on thin silicon-on-insulator (SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology. The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion, which is different from that of a bulk counterpart. A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation. The Early voltage shows a kink with the increase of the reverse base–collector bias. Large differences are observed between SOI devices and their bulk counterparts. The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design, the simulation and the fabrication of high performance SOI SiGe devices and circuits.

Key words: heterojunction bipolar transistor (HBT), SiGe, silicon-on-insulator, Early effect

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

徐小波, 张鹤鸣, 胡辉勇, 马建立. Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors[J]. 中国物理B, 2011, 20(5): 58502-058502.

Xu Xiao-Bo (徐小波), Zhang He-Ming (张鹤鸣), Hu Hui-Yong (胡辉勇), Ma Jian-Li (马建立). Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors[J]. Chin. Phys. B, 2011, 20(5): 58502-058502.

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Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

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