中国物理B ›› 2011, Vol. 20 ›› Issue (3): 37805-037805.doi: 10.1088/1674-1056/20/3/037805

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

杜大超, 张进成, 欧新秀, 王昊, 陈珂, 薛军帅, 许晟瑞, 郝跃   

  1. Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2010-07-19 修回日期:2010-11-01 出版日期:2011-03-15 发布日期:2011-03-15
  • 基金资助:
    Project supported by the National Key Science &

Investigation of yellow luminescence intensity of N-polar unintentionally doped GaN

Du Da-Chao(杜大超)†, Zhang Jin-Cheng(张进成), Ou Xin-Xiu(欧新秀), Wang Hao(王昊), Chen Ke(陈珂), Xue Jun-Shuai(薛军帅), Xu Sheng-Rui(许晟瑞), and Hao Yue(郝跃)   

  1. Key Laboratory of Wide Band-Gap Semiconductors and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2010-07-19 Revised:2010-11-01 Online:2011-03-15 Published:2011-03-15
  • Supported by:
    Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Major Program and Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Chinese Advance Research Program of Science and Technology (Grant Nos. 51308040301, 51308030102, 51311050112, and 51323030207).

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摘要： This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.

Abstract: This paper reports that the yellow luminescence intensity of N-polar GaN Epi-layers is much lower than that of Ga-polar ones due to the inverse polarity, and reduces drastically in the N-polar unintentionally-doped GaN after etching in KOH solution. The ratio of yellow luminescence intensity to band-edge emission intensity decreases sharply with the etching time. The full width at half maximum of x-ray diffraction of (10-12) plane falls sharply after etching, and the surface morphology characterized by scanning electron microscope shows a rough surface that changes with the etching time. The mechanism for the generation of the yellow luminescence are explained in details.

Key words: N-polar GaN, yellow luminescence, KOH etching

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
71.55.Eq (III-V semiconductors) 81.65.Cf (Surface cleaning, etching, patterning)